Crystallographic orientation dependent ferroelectric characteristics of (Bi 3.3 ,La 0.8 )Ti 3 O 12 (BLT) capacitors

Nam Kyeong Kim, Seung Jin Yeom, Soon Yong Kweon, Eun Seok Choi, Ho Jung Sun, Hyunchul Sohn, Jae Sung Roh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The 70 nm thick (Bi 3.3 ,La 0.8 )Ti 3 O 12 (BLT) thin films were fabricated by deposition multiple spin coating layers and then crystallized by RTA and FA on Pt/TiO x / SiO 2 /Si substrate. Films were synthesized by MOD (metal organic decomposition) derived precursor to easy mass production. The randomly oriented BLT thin films have resulted from newly developed noble bake process, while a highly c-axis preferred orientation occurs for conventional baked thin film. The texture coefficient of I(004), I(117), I(111) and I(200) of noble baked BLT capacitors has 0, 0.24, 1.35 and 1.92, respectively. The films were very dense with no apparent pore site. The switching polarization (P*-P ^ ) and coercive voltage (2 Vc) of randomly oriented BLT thin films were nearly saturated at 3 V to have 20.03 μC/cm 2 and 1.38 V, respectively. However, strongly c-axis oriented thin films have 10.1 μC/cm 2 and 1.42 V for drive 3 V. The random orientation BLT shows good insulating behavior (9.4E-7 A/cm 2 at 3 V). Both randomly oriented capacitor and highly c-axis preferred orientation thin films show no degradation of polarization due to fatigue after 1E11 cycles using 3 V (428.5 kV/cm) bipolar square pulse at 1 MHz.

Original languageEnglish
Pages (from-to)89-97
Number of pages9
JournalIntegrated Ferroelectrics
Volume70
DOIs
Publication statusPublished - 2005 Sep 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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