Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

Hock Key Moon, Jaehong Yoon, Hyungjun Kim, Nae Eung Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

Original languageEnglish
Pages (from-to)611-616
Number of pages6
JournalMetals and Materials International
Volume19
Issue number3
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

Organic Chemicals
Multilayer films
Organic chemicals
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
Annealing
annealing
electrical resistivity
Multilayers
thermal reactors
Electron spectroscopy
electroplating
Electroplating
Aluminum
Alloying
Linewidth
alloying
Intermetallics
intermetallics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{431a7a8ad2a54e8c8c48cf8c5870ddf4,
title = "Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition",
abstract = "One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.",
author = "Moon, {Hock Key} and Jaehong Yoon and Hyungjun Kim and Lee, {Nae Eung}",
year = "2013",
month = "5",
day = "1",
doi = "10.1007/s12540-013-3034-6",
language = "English",
volume = "19",
pages = "611--616",
journal = "Metals and Materials International",
issn = "1598-9623",
publisher = "Korean Institute of Metals and Materials",
number = "3",

}

Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition. / Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae Eung.

In: Metals and Materials International, Vol. 19, No. 3, 01.05.2013, p. 611-616.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

AU - Moon, Hock Key

AU - Yoon, Jaehong

AU - Kim, Hyungjun

AU - Lee, Nae Eung

PY - 2013/5/1

Y1 - 2013/5/1

N2 - One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

AB - One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=84878260209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878260209&partnerID=8YFLogxK

U2 - 10.1007/s12540-013-3034-6

DO - 10.1007/s12540-013-3034-6

M3 - Article

AN - SCOPUS:84878260209

VL - 19

SP - 611

EP - 616

JO - Metals and Materials International

JF - Metals and Materials International

SN - 1598-9623

IS - 3

ER -