Abstract
Although antimony triselenide (Sb 2 Se 3 ) has been intensively investigated as a low-cost p-type semiconductor for photoelectrochemical (PEC) water splitting, most previous studies focused on only the top interface of Sb 2 Se 3 photocathodes. Herein, a solution-processed Cu-doped NiO x (Cu:NiO x ) thin film is proposed as an effective bottom contact layer for the Sb 2 Se 3 photocathode. The photocurrent density of the Sb 2 Se 3 photocathode is improved to a record-high level of 17.5 mA cm -2 upon the insertion of Cu:NiO x capable of blocking the recombination at the back interface, while facilitating hole extraction. Electrochemical impedance spectroscopy and intensity-modulated photocurrent spectroscopy, in conjunction with other observations, indicate that the enhanced photocurrent is due to the improved quality of the bottom contact without a noticeable change in the top interface. This study not only provides new insight into the role of the bottom contact layer in photocathodes, but also is an important step toward efficient PEC H 2 production via a solution-processable Earth-abundant photoelectrode.
| Original language | English |
|---|---|
| Pages (from-to) | 995-1003 |
| Number of pages | 9 |
| Journal | ACS Energy Letters |
| Volume | 4 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2019 May 10 |
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All Science Journal Classification (ASJC) codes
- Chemistry (miscellaneous)
- Renewable Energy, Sustainability and the Environment
- Fuel Technology
- Energy Engineering and Power Technology
- Materials Chemistry
Cite this
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Cu-Doped NiO x as an Effective Hole-Selective Layer for a High-Performance Sb 2 Se 3 Photocathode for Photoelectrochemical Water Splitting . / Lee, Hyungsoo; Yang, Wooseok; Tan, Jeiwan; Oh, Yunjung; Park, Jaemin; Moon, Joo Ho.
In: ACS Energy Letters, Vol. 4, No. 5, 10.05.2019, p. 995-1003.Research output: Contribution to journal › Article
TY - JOUR
T1 - Cu-Doped NiO x as an Effective Hole-Selective Layer for a High-Performance Sb 2 Se 3 Photocathode for Photoelectrochemical Water Splitting
AU - Lee, Hyungsoo
AU - Yang, Wooseok
AU - Tan, Jeiwan
AU - Oh, Yunjung
AU - Park, Jaemin
AU - Moon, Joo Ho
PY - 2019/5/10
Y1 - 2019/5/10
N2 - Although antimony triselenide (Sb 2 Se 3 ) has been intensively investigated as a low-cost p-type semiconductor for photoelectrochemical (PEC) water splitting, most previous studies focused on only the top interface of Sb 2 Se 3 photocathodes. Herein, a solution-processed Cu-doped NiO x (Cu:NiO x ) thin film is proposed as an effective bottom contact layer for the Sb 2 Se 3 photocathode. The photocurrent density of the Sb 2 Se 3 photocathode is improved to a record-high level of 17.5 mA cm -2 upon the insertion of Cu:NiO x capable of blocking the recombination at the back interface, while facilitating hole extraction. Electrochemical impedance spectroscopy and intensity-modulated photocurrent spectroscopy, in conjunction with other observations, indicate that the enhanced photocurrent is due to the improved quality of the bottom contact without a noticeable change in the top interface. This study not only provides new insight into the role of the bottom contact layer in photocathodes, but also is an important step toward efficient PEC H 2 production via a solution-processable Earth-abundant photoelectrode.
AB - Although antimony triselenide (Sb 2 Se 3 ) has been intensively investigated as a low-cost p-type semiconductor for photoelectrochemical (PEC) water splitting, most previous studies focused on only the top interface of Sb 2 Se 3 photocathodes. Herein, a solution-processed Cu-doped NiO x (Cu:NiO x ) thin film is proposed as an effective bottom contact layer for the Sb 2 Se 3 photocathode. The photocurrent density of the Sb 2 Se 3 photocathode is improved to a record-high level of 17.5 mA cm -2 upon the insertion of Cu:NiO x capable of blocking the recombination at the back interface, while facilitating hole extraction. Electrochemical impedance spectroscopy and intensity-modulated photocurrent spectroscopy, in conjunction with other observations, indicate that the enhanced photocurrent is due to the improved quality of the bottom contact without a noticeable change in the top interface. This study not only provides new insight into the role of the bottom contact layer in photocathodes, but also is an important step toward efficient PEC H 2 production via a solution-processable Earth-abundant photoelectrode.
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U2 - 10.1021/acsenergylett.9b00414
DO - 10.1021/acsenergylett.9b00414
M3 - Article
AN - SCOPUS:85064831483
VL - 4
SP - 995
EP - 1003
JO - ACS Energy Letters
JF - ACS Energy Letters
SN - 2380-8195
IS - 5
ER -