Cu-Doped NiO                         x                          as an Effective Hole-Selective Layer for a High-Performance Sb                         2                         Se                         3                          Photocathode for Photoelectrochemical Water Splitting

Hyungsoo Lee; Wooseok Yang; Jeiwan Tan; Yunjung Oh; Jaemin Park; Jooho Moon

doi:10.1021/acsenergylett.9b00414

Cu-Doped NiO _x as an Effective Hole-Selective Layer for a High-Performance Sb ₂ Se ₃ Photocathode for Photoelectrochemical Water Splitting

Hyungsoo Lee, Wooseok Yang, Jeiwan Tan, Yunjung Oh, Jaemin Park, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Although antimony triselenide (Sb ₂ Se ₃ ) has been intensively investigated as a low-cost p-type semiconductor for photoelectrochemical (PEC) water splitting, most previous studies focused on only the top interface of Sb ₂ Se ₃ photocathodes. Herein, a solution-processed Cu-doped NiO _x (Cu:NiO _x ) thin film is proposed as an effective bottom contact layer for the Sb ₂ Se ₃ photocathode. The photocurrent density of the Sb ₂ Se ₃ photocathode is improved to a record-high level of 17.5 mA cm ^-2 upon the insertion of Cu:NiO _x capable of blocking the recombination at the back interface, while facilitating hole extraction. Electrochemical impedance spectroscopy and intensity-modulated photocurrent spectroscopy, in conjunction with other observations, indicate that the enhanced photocurrent is due to the improved quality of the bottom contact without a noticeable change in the top interface. This study not only provides new insight into the role of the bottom contact layer in photocathodes, but also is an important step toward efficient PEC H ₂ production via a solution-processable Earth-abundant photoelectrode.

Original language	English
Pages (from-to)	995-1003
Number of pages	9
Journal	ACS Energy Letters
Volume	4
Issue number	5
DOIs	https://doi.org/10.1021/acsenergylett.9b00414
Publication status	Published - 2019 May 10

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation (NRF) of Korea grant (2012R1A3A2026417) funded by the Ministry of Science and ICT.

Publisher Copyright:
© 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

Chemistry (miscellaneous)
Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology
Materials Chemistry

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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Lee, H., Yang, W., Tan, J., Oh, Y., Park, J., & Moon, J. (2019). Cu-Doped NiO _x as an Effective Hole-Selective Layer for a High-Performance Sb ₂ Se ₃ Photocathode for Photoelectrochemical Water Splitting ACS Energy Letters, 4(5), 995-1003. https://doi.org/10.1021/acsenergylett.9b00414

Lee, Hyungsoo ; Yang, Wooseok ; Tan, Jeiwan ; Oh, Yunjung ; Park, Jaemin ; Moon, Jooho. / Cu-Doped NiO _x as an Effective Hole-Selective Layer for a High-Performance Sb ₂ Se ₃ Photocathode for Photoelectrochemical Water Splitting In: ACS Energy Letters. 2019 ; Vol. 4, No. 5. pp. 995-1003.

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title = " Cu-Doped NiO x as an Effective Hole-Selective Layer for a High-Performance Sb 2 Se 3 Photocathode for Photoelectrochemical Water Splitting ",

abstract = " Although antimony triselenide (Sb 2 Se 3 ) has been intensively investigated as a low-cost p-type semiconductor for photoelectrochemical (PEC) water splitting, most previous studies focused on only the top interface of Sb 2 Se 3 photocathodes. Herein, a solution-processed Cu-doped NiO x (Cu:NiO x ) thin film is proposed as an effective bottom contact layer for the Sb 2 Se 3 photocathode. The photocurrent density of the Sb 2 Se 3 photocathode is improved to a record-high level of 17.5 mA cm -2 upon the insertion of Cu:NiO x capable of blocking the recombination at the back interface, while facilitating hole extraction. Electrochemical impedance spectroscopy and intensity-modulated photocurrent spectroscopy, in conjunction with other observations, indicate that the enhanced photocurrent is due to the improved quality of the bottom contact without a noticeable change in the top interface. This study not only provides new insight into the role of the bottom contact layer in photocathodes, but also is an important step toward efficient PEC H 2 production via a solution-processable Earth-abundant photoelectrode. ",

author = "Hyungsoo Lee and Wooseok Yang and Jeiwan Tan and Yunjung Oh and Jaemin Park and Jooho Moon",

note = "Funding Information: This work was supported by the National Research Foundation (NRF) of Korea grant (2012R1A3A2026417) funded by the Ministry of Science and ICT. Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

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Lee, H, Yang, W, Tan, J, Oh, Y, Park, J & Moon, J 2019, ' Cu-Doped NiO _x as an Effective Hole-Selective Layer for a High-Performance Sb ₂ Se ₃ Photocathode for Photoelectrochemical Water Splitting ', ACS Energy Letters, vol. 4, no. 5, pp. 995-1003. https://doi.org/10.1021/acsenergylett.9b00414

Cu-Doped NiO _x as an Effective Hole-Selective Layer for a High-Performance Sb ₂ Se ₃ Photocathode for Photoelectrochemical Water Splitting . / Lee, Hyungsoo; Yang, Wooseok; Tan, Jeiwan; Oh, Yunjung; Park, Jaemin; Moon, Jooho.

In: ACS Energy Letters, Vol. 4, No. 5, 10.05.2019, p. 995-1003.

Research output: Contribution to journal › Article › peer-review

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AU - Oh, Yunjung

AU - Park, Jaemin

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N2 - Although antimony triselenide (Sb 2 Se 3 ) has been intensively investigated as a low-cost p-type semiconductor for photoelectrochemical (PEC) water splitting, most previous studies focused on only the top interface of Sb 2 Se 3 photocathodes. Herein, a solution-processed Cu-doped NiO x (Cu:NiO x ) thin film is proposed as an effective bottom contact layer for the Sb 2 Se 3 photocathode. The photocurrent density of the Sb 2 Se 3 photocathode is improved to a record-high level of 17.5 mA cm -2 upon the insertion of Cu:NiO x capable of blocking the recombination at the back interface, while facilitating hole extraction. Electrochemical impedance spectroscopy and intensity-modulated photocurrent spectroscopy, in conjunction with other observations, indicate that the enhanced photocurrent is due to the improved quality of the bottom contact without a noticeable change in the top interface. This study not only provides new insight into the role of the bottom contact layer in photocathodes, but also is an important step toward efficient PEC H 2 production via a solution-processable Earth-abundant photoelectrode.

AB - Although antimony triselenide (Sb 2 Se 3 ) has been intensively investigated as a low-cost p-type semiconductor for photoelectrochemical (PEC) water splitting, most previous studies focused on only the top interface of Sb 2 Se 3 photocathodes. Herein, a solution-processed Cu-doped NiO x (Cu:NiO x ) thin film is proposed as an effective bottom contact layer for the Sb 2 Se 3 photocathode. The photocurrent density of the Sb 2 Se 3 photocathode is improved to a record-high level of 17.5 mA cm -2 upon the insertion of Cu:NiO x capable of blocking the recombination at the back interface, while facilitating hole extraction. Electrochemical impedance spectroscopy and intensity-modulated photocurrent spectroscopy, in conjunction with other observations, indicate that the enhanced photocurrent is due to the improved quality of the bottom contact without a noticeable change in the top interface. This study not only provides new insight into the role of the bottom contact layer in photocathodes, but also is an important step toward efficient PEC H 2 production via a solution-processable Earth-abundant photoelectrode.

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Lee H, Yang W, Tan J, Oh Y, Park J, Moon J. Cu-Doped NiO _x as an Effective Hole-Selective Layer for a High-Performance Sb ₂ Se ₃ Photocathode for Photoelectrochemical Water Splitting ACS Energy Letters. 2019 May 10;4(5):995-1003. https://doi.org/10.1021/acsenergylett.9b00414