Cu films by partially ionized beam deposition for ultra large scale integration metallization

Ki Hwan Kim, Hong Gui Jang, Sung Han, Hyung Jin Jung, Seok Keun Koh, Doo Jin Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Highly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si(100) at room temperature by partially ionized beam deposition (PIBD) at pressure of 8 X 10-7-1 X 10-6 Torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes, and the relative intensity ratio, I(111)/I(200) of the Cu films increased from 6.8 at Va = 0 kV to 37 at Va = 4 kV. There was no indication of impurities in the system from Auger electron spectroscopy (AES) analyses. A large increase in grain size of the films occurred with Va up to Va = 1 kV, but little increase occurred with Va > 1 kV. Surface roughness of the Cu films decreased with Va, and resistivity showed the same trends as that of the surface roughness. In the Cu films by PIBD, it is considered that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, dimensions of which are 0.5 μm in diameter and 1.5 μm in depth, in the Cu films made at Va = 4 kV were completely filled without voids. Interface adhesion of the Cu film on Si(100) deposited at Va = 3 kV was five times greater than that of Cu film deposited at Va = 0 kV, as determined by a scratch test.

Original languageEnglish
Pages (from-to)1158-1163
Number of pages6
JournalJournal of Materials Research
Volume13
Issue number5
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

ULSI circuits
large scale integration
Metallizing
Electric potential
electric potential
surface roughness
Surface roughness
electrical resistivity
Surface scattering
Auger electron spectroscopy
scattering
Auger spectroscopy
electron spectroscopy
voids
crystallinity
indication
Grain boundaries
adhesion
Adhesion
grain boundaries

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, Ki Hwan ; Jang, Hong Gui ; Han, Sung ; Jung, Hyung Jin ; Koh, Seok Keun ; Choi, Doo Jin. / Cu films by partially ionized beam deposition for ultra large scale integration metallization. In: Journal of Materials Research. 1998 ; Vol. 13, No. 5. pp. 1158-1163.
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Cu films by partially ionized beam deposition for ultra large scale integration metallization. / Kim, Ki Hwan; Jang, Hong Gui; Han, Sung; Jung, Hyung Jin; Koh, Seok Keun; Choi, Doo Jin.

In: Journal of Materials Research, Vol. 13, No. 5, 01.01.1998, p. 1158-1163.

Research output: Contribution to journalArticle

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