Herein, we report the enhanced thermoelectric performance of Cu incorporated Bi 2 Te 2.7 Se 0.3 prepared by melt spinning. The electronic transport properties were significantly improved by Cu incorporation due to the synergetic effect of carrier tuning, band modification, and electron-phonon transport control. The steady dimensionless thermoelectric figure of merit higher than 0.90 was achieved in the wide range of temperature range of 350–450 K for Cu 0.008 Bi 2 Te 2.7 Se 0.3 , which is ~30% enhancement in comparison with pristine Bi 2 Te 2.7 Se 0.3 . This result can lead to high thermoelectric power generation efficiency 4.2% at ΔT = 180 K.
Bibliographical noteFunding Information:
This work was supported by Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-MA1701-05 .
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys