Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN

Dae Woo Kim, Hong Koo Baik

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We have investigated the Ohmic contact formation mechanism of Si/Ti-based contacts to n-GaN. The Si/Ti contact system was selected because Ti silicides have a low work function and also Si has been used widely as an n-type dopant. Our experimental results show that the Ohmic behavior of Si/Ti-based contacts were attributed to the low barrier height of the Ti silicide/GaN interface. The contact resistance of Si/Ti-based Ohmic contacts decreased exponentially with the measuring temperature. It can be concluded that current flows over the low barrier height by thermionic emission.

Original languageEnglish
Pages (from-to)1011-1013
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number7
DOIs
Publication statusPublished - 2000 Aug 14

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electric contacts
conduction
silicides
thermionic emission
contact resistance
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We have investigated the Ohmic contact formation mechanism of Si/Ti-based contacts to n-GaN. The Si/Ti contact system was selected because Ti silicides have a low work function and also Si has been used widely as an n-type dopant. Our experimental results show that the Ohmic behavior of Si/Ti-based contacts were attributed to the low barrier height of the Ti silicide/GaN interface. The contact resistance of Si/Ti-based Ohmic contacts decreased exponentially with the measuring temperature. It can be concluded that current flows over the low barrier height by thermionic emission.",
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Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN. / Kim, Dae Woo; Baik, Hong Koo.

In: Applied Physics Letters, Vol. 77, No. 7, 14.08.2000, p. 1011-1013.

Research output: Contribution to journalArticle

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N2 - We have investigated the Ohmic contact formation mechanism of Si/Ti-based contacts to n-GaN. The Si/Ti contact system was selected because Ti silicides have a low work function and also Si has been used widely as an n-type dopant. Our experimental results show that the Ohmic behavior of Si/Ti-based contacts were attributed to the low barrier height of the Ti silicide/GaN interface. The contact resistance of Si/Ti-based Ohmic contacts decreased exponentially with the measuring temperature. It can be concluded that current flows over the low barrier height by thermionic emission.

AB - We have investigated the Ohmic contact formation mechanism of Si/Ti-based contacts to n-GaN. The Si/Ti contact system was selected because Ti silicides have a low work function and also Si has been used widely as an n-type dopant. Our experimental results show that the Ohmic behavior of Si/Ti-based contacts were attributed to the low barrier height of the Ti silicide/GaN interface. The contact resistance of Si/Ti-based Ohmic contacts decreased exponentially with the measuring temperature. It can be concluded that current flows over the low barrier height by thermionic emission.

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