CVPE growth of GaN films

T. H. Oh; B. J. Park; I. H. Kim; B. H. Kum; M. W. Shin

CVPE growth of GaN films

T. H. Oh, B. J. Park, I. H. Kim, B. H. Kum, M. W. Shin

School of Integrated Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper we will discuss the growth of Gallium Nitride (GAN) films via the Chlorine Vapor Phase Epitaxy (CVPE) technique on (0001) sapphire substrate. At a temperature of 1040 C, GaN films are grown at rates between 40 and 80 μm/hr. The growth rate and film quality based on XRD data are found to strongly dependent on the flow rate of source gases, NH₃ and GaCl₃. XRD measurements indicate FWHM value of (0002) peak less than 0.35 deg for samples with thickness greater than 40 μm. Room temperature PL measurements of the samples indicate a strong emission at about 363 nm. We investigate the effect of flow rate of V/III gas sources at 1040 C for 45 minutes.

Original language	English
Pages	693-696
Number of pages	4
Publication status	Published - 1997
Event	Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) - Seoul, Korea Duration: 1997 May 25 → 1997 May 30

Other

Other	Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)
City	Seoul, Korea
Period	97/5/25 → 97/5/30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry

Cite this

@conference{75efb084ed214c79b07504ac94d06c1f,

title = "CVPE growth of GaN films",

abstract = "In this paper we will discuss the growth of Gallium Nitride (GAN) films via the Chlorine Vapor Phase Epitaxy (CVPE) technique on (0001) sapphire substrate. At a temperature of 1040 C, GaN films are grown at rates between 40 and 80 μm/hr. The growth rate and film quality based on XRD data are found to strongly dependent on the flow rate of source gases, NH3 and GaCl3. XRD measurements indicate FWHM value of (0002) peak less than 0.35 deg for samples with thickness greater than 40 μm. Room temperature PL measurements of the samples indicate a strong emission at about 363 nm. We investigate the effect of flow rate of V/III gas sources at 1040 C for 45 minutes.",

author = "Oh, {T. H.} and Park, {B. J.} and Kim, {I. H.} and Kum, {B. H.} and Shin, {M. W.}",

year = "1997",

language = "English",

pages = "693--696",

note = "Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) ; Conference date: 25-05-1997 Through 30-05-1997",

}

TY - CONF

T1 - CVPE growth of GaN films

AU - Oh, T. H.

AU - Park, B. J.

AU - Kim, I. H.

AU - Kum, B. H.

AU - Shin, M. W.

PY - 1997

Y1 - 1997

N2 - In this paper we will discuss the growth of Gallium Nitride (GAN) films via the Chlorine Vapor Phase Epitaxy (CVPE) technique on (0001) sapphire substrate. At a temperature of 1040 C, GaN films are grown at rates between 40 and 80 μm/hr. The growth rate and film quality based on XRD data are found to strongly dependent on the flow rate of source gases, NH3 and GaCl3. XRD measurements indicate FWHM value of (0002) peak less than 0.35 deg for samples with thickness greater than 40 μm. Room temperature PL measurements of the samples indicate a strong emission at about 363 nm. We investigate the effect of flow rate of V/III gas sources at 1040 C for 45 minutes.

AB - In this paper we will discuss the growth of Gallium Nitride (GAN) films via the Chlorine Vapor Phase Epitaxy (CVPE) technique on (0001) sapphire substrate. At a temperature of 1040 C, GaN films are grown at rates between 40 and 80 μm/hr. The growth rate and film quality based on XRD data are found to strongly dependent on the flow rate of source gases, NH3 and GaCl3. XRD measurements indicate FWHM value of (0002) peak less than 0.35 deg for samples with thickness greater than 40 μm. Room temperature PL measurements of the samples indicate a strong emission at about 363 nm. We investigate the effect of flow rate of V/III gas sources at 1040 C for 45 minutes.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030691549&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030691549

SP - 693

EP - 696

T2 - Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)

Y2 - 25 May 1997 through 30 May 1997

ER -

CVPE growth of GaN films

Abstract

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All Science Journal Classification (ASJC) codes

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