CVPE growth of GaN films

T. H. Oh, B. J. Park, I. H. Kim, B. H. Kum, M. W. Shin

Research output: Contribution to conferencePaper

Abstract

In this paper we will discuss the growth of Gallium Nitride (GAN) films via the Chlorine Vapor Phase Epitaxy (CVPE) technique on (0001) sapphire substrate. At a temperature of 1040 C, GaN films are grown at rates between 40 and 80 μm/hr. The growth rate and film quality based on XRD data are found to strongly dependent on the flow rate of source gases, NH3 and GaCl3. XRD measurements indicate FWHM value of (0002) peak less than 0.35 deg for samples with thickness greater than 40 μm. Room temperature PL measurements of the samples indicate a strong emission at about 363 nm. We investigate the effect of flow rate of V/III gas sources at 1040 C for 45 minutes.

Original languageEnglish
Pages693-696
Number of pages4
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) - Seoul, Korea
Duration: 1997 May 251997 May 30

Other

OtherProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)
CitySeoul, Korea
Period97/5/2597/5/30

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Oh, T. H., Park, B. J., Kim, I. H., Kum, B. H., & Shin, M. W. (1997). CVPE growth of GaN films. 693-696. Paper presented at Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea, .