To dope 2D semiconductor channels, charge-transfer doping has generally been done by thermal deposition of inorganic or organic thin-film layers on top of the 2D channel in bottom-gate field-effect transistors (FETs). The doping effects are reproducible in most cases. However, such thermal deposition will damage the surface of 2D channels due to the kinetic energy of depositing atoms, causing hysteresis or certain degradation. Here, a more desirable charge-transfer doping process is suggested. A damage-free charge-transfer doping is conducted for 2D MoTe2 (or MoS2) channels using a polydimethylsiloxane stamp. MoO3 or LiF is initially deposited on the stamp as a doping medium. Hysteresis-minimized transfer characteristics are achieved from stamp-doped FETs, while other devices with direct thermal deposition-doped channels show large hysteresis. The stamping method seems to induce a van der Waals-like damage-free interface between the channel and doping media. The stamp-induced doping is also well applied for a MoTe2-based complementary inverter because MoO3- and LiF-doping by separate stamps effectively modifies two ambipolar MoTe2 channels to p- and n-type, respectively.
|Publication status||Published - 2022 Mar 18|
Bibliographical noteFunding Information:
The authors acknowledge the financial support from the National Research Foundation of Korea (NRF) (SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). J.H.P. acknowledges this research was supported by Basic Science Research Program through NRF (NRF‐2019R1I1A1A01063644). Y.C. acknowledges this research was funded by Basic Science Research Program through NRF (NRF‐2019R1A6A3A13092041).
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All Science Journal Classification (ASJC) codes
- Materials Science(all)