Damage-free hydrogenation of graphene via ion energy control in plasma

Jongin Cha, Harim Choi, Jongill Hong

Research output: Contribution to journalArticlepeer-review


We proposed appropriate plasma conditions for hydrogenation of graphene without structural defect formation using ion energy analysis. Graphene sheets were exposed to plasma having H3 + ions with energies of 3.45, 5.35, and 7.45 eV. Only the specimen treated by the plasma with the lowest energy was converted back to graphene by thermal annealing, and the others showed irreversible characteristics because of the vacancy defects generated by high-energy ions. Finally, we demonstrated the reversible characteristic in graphene field-effect transistor using the plasma with appropriate ion energy and Joule heating, indicating that damage induced by plasma was negligible.

Original languageEnglish
Article number015002
JournalApplied Physics Express
Issue number1
Publication statusPublished - 2022 Jan

Bibliographical note

Publisher Copyright:
© 2021 The Japan Society of Applied Physics

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Damage-free hydrogenation of graphene via ion energy control in plasma'. Together they form a unique fingerprint.

Cite this