Data randomization scheme for endurance enhancement and interference mitigation of multilevel flash memory devices

Jaewon Cha, Sungho Kang

Research output: Contribution to journalArticle

18 Citations (Scopus)


In this letter, we propose a data randomization scheme for endurance and interference mitigation of deeply-scaled multilevel flash memory. We address the relationships between data patterns and the raw bit error rate. An on-chip pseudorandom generator composed of an address-based seed location decoder is developed and evaluated with respect to uniformity. Experiments performed with 2x-nm and 4x-nm NAND flash memory devices illustrate the effectiveness of our scheme. The results show that the error rate is reduced up to 86% compared to that of a conventional cycling scheme. Accordingly, the endurance phenomenon can be mitigated through analysis of interference that causes tech shrinkage.

Original languageEnglish
Pages (from-to)166-169
Number of pages4
JournalETRI Journal
Issue number1
Publication statusPublished - 2013 Feb 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Electrical and Electronic Engineering

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