DC-50 GHz low-loss wafer-scale package for RF MEMS

Byung Wook Min, Kamran Entesari, Gabriel M. Rebeiz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

This paper reports on the design and fabrication of wafer-scale packaging for RF MEMS devices. Coplanar waveguide (CPW) lines on a glass wafer are covered with a high resistivity silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric interlayer for CPW feedthroughs underneath the gold sealing ring. The designed feedthrough has an insertion loss of 0.06-0.1 dB at 1-50 GHz with a return loss of < -35 dB (per transition). The gold sealing ring is connected to the CPW ground to achieve around 10 dB higher isolation. The whole package has a measured insertion loss of 0.2-0.5 dB and return loss of < -20 dB up to 50 GHz. The measured insertion loss at 1-2 GHz is 0.2 dB with return loss of < -30 dB.

Original languageEnglish
Title of host publicationConference Proceedings- 34th European Microwave Conference
Pages1289-1291
Number of pages3
Publication statusPublished - 2004 Dec 1
EventConference Proceedings- 34th European Microwave Conference - London, United Kingdom
Duration: 2004 Oct 122004 Oct 14

Publication series

NameConference Proceedings- European Microwave Conference
Volume3

Other

OtherConference Proceedings- 34th European Microwave Conference
CountryUnited Kingdom
CityLondon
Period04/10/1204/10/14

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Min, B. W., Entesari, K., & Rebeiz, G. M. (2004). DC-50 GHz low-loss wafer-scale package for RF MEMS. In Conference Proceedings- 34th European Microwave Conference (pp. 1289-1291). (Conference Proceedings- European Microwave Conference; Vol. 3).