DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

Won Sang Lee, Ki Woong Chung, Moo Whan Shin

Research output: Contribution to journalConference article

Abstract

In this paper, we report on the DC and large-signal RF performance of recessed gate GaN MESFETs fabricated using the photoelectrochemical etching process. The fabricated GaN MESFET exhibits a current saturation at VDS = 4 V and a pinch-off at VGS = -3 V. The peak drain current of the device is about 230 mA/mm at 300 K and does not significantly change with temperature up to 500 K operation. The fT and fmax from the device are 6.35 GHz and 10.25 GHz, respectively. The experimental device characteristics were compared with the results obtained by the large-signal RF model utilizing the harmonic balance techniques. The simulated power added efficiency (PAE) was about 40% at an operating frequency of 4 GHz.

Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000 Jan 1
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

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Drain current
Etching
field effect transistors
direct current
etching
power efficiency
Temperature
saturation
harmonics
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process",
abstract = "In this paper, we report on the DC and large-signal RF performance of recessed gate GaN MESFETs fabricated using the photoelectrochemical etching process. The fabricated GaN MESFET exhibits a current saturation at VDS = 4 V and a pinch-off at VGS = -3 V. The peak drain current of the device is about 230 mA/mm at 300 K and does not significantly change with temperature up to 500 K operation. The fT and fmax from the device are 6.35 GHz and 10.25 GHz, respectively. The experimental device characteristics were compared with the results obtained by the large-signal RF model utilizing the harmonic balance techniques. The simulated power added efficiency (PAE) was about 40{\%} at an operating frequency of 4 GHz.",
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DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process. / Lee, Won Sang; Chung, Ki Woong; Shin, Moo Whan.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

TY - JOUR

T1 - DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

AU - Lee, Won Sang

AU - Chung, Ki Woong

AU - Shin, Moo Whan

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N2 - In this paper, we report on the DC and large-signal RF performance of recessed gate GaN MESFETs fabricated using the photoelectrochemical etching process. The fabricated GaN MESFET exhibits a current saturation at VDS = 4 V and a pinch-off at VGS = -3 V. The peak drain current of the device is about 230 mA/mm at 300 K and does not significantly change with temperature up to 500 K operation. The fT and fmax from the device are 6.35 GHz and 10.25 GHz, respectively. The experimental device characteristics were compared with the results obtained by the large-signal RF model utilizing the harmonic balance techniques. The simulated power added efficiency (PAE) was about 40% at an operating frequency of 4 GHz.

AB - In this paper, we report on the DC and large-signal RF performance of recessed gate GaN MESFETs fabricated using the photoelectrochemical etching process. The fabricated GaN MESFET exhibits a current saturation at VDS = 4 V and a pinch-off at VGS = -3 V. The peak drain current of the device is about 230 mA/mm at 300 K and does not significantly change with temperature up to 500 K operation. The fT and fmax from the device are 6.35 GHz and 10.25 GHz, respectively. The experimental device characteristics were compared with the results obtained by the large-signal RF model utilizing the harmonic balance techniques. The simulated power added efficiency (PAE) was about 40% at an operating frequency of 4 GHz.

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