DC and RF characteristics of AlGaN/GaN HFET using RuO 2 -based gate for high power and high temperature application

Jae Seung Lee, Jong Wook Kim, Jin Ho Shin, Sung Bum Bae, Yong Hyun Lee, Jung Hee Lee, Chang Seok Kim, Jae Eung Oh, Moo Whan Shin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Al 0.25 Ga 0.75 N/GaN HFETs grown on a sapphire substrate were fabricated using an RuO 2 based Schottky contact. The Schottky contact characteristics for various gate metals, such as RuO 2 /Au, Pt/Au, Ni/Au, and Ni/Pt/Au, were compared, and showed that the RuO 2 /Au metal scheme was superior to the others. RuO 2 -gated AlGaN/GaN HFETs with a 220 Å and 270 Å-thick Al 0.25 Ga 0.75 N layer exhibited a maximum drain current of 689 and 808 mA/mm at V GS = +1 V, respectively. An HFET with a 220 Å-thick Al 0.25 Ga 0.75 N layer exhibited a current gain cut-off frequency of 27 GHz and maximum oscillation frequency of 46 GHz for a gate length of 0.8 μm. The RF output power density for the device was 1.12 W/mm at 1.8 GHz.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume39
Issue numberSUPPL. Part 1
Publication statusPublished - 2001 Dec 1

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electric contacts
direct current
metals
radiant flux density
sapphire
cut-off
oscillations
temperature
output

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, Jae Seung ; Kim, Jong Wook ; Shin, Jin Ho ; Bae, Sung Bum ; Lee, Yong Hyun ; Lee, Jung Hee ; Kim, Chang Seok ; Oh, Jae Eung ; Shin, Moo Whan. / DC and RF characteristics of AlGaN/GaN HFET using RuO 2 -based gate for high power and high temperature application In: Journal of the Korean Physical Society. 2001 ; Vol. 39, No. SUPPL. Part 1.
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abstract = "Al 0.25 Ga 0.75 N/GaN HFETs grown on a sapphire substrate were fabricated using an RuO 2 based Schottky contact. The Schottky contact characteristics for various gate metals, such as RuO 2 /Au, Pt/Au, Ni/Au, and Ni/Pt/Au, were compared, and showed that the RuO 2 /Au metal scheme was superior to the others. RuO 2 -gated AlGaN/GaN HFETs with a 220 {\AA} and 270 {\AA}-thick Al 0.25 Ga 0.75 N layer exhibited a maximum drain current of 689 and 808 mA/mm at V GS = +1 V, respectively. An HFET with a 220 {\AA}-thick Al 0.25 Ga 0.75 N layer exhibited a current gain cut-off frequency of 27 GHz and maximum oscillation frequency of 46 GHz for a gate length of 0.8 μm. The RF output power density for the device was 1.12 W/mm at 1.8 GHz.",
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DC and RF characteristics of AlGaN/GaN HFET using RuO 2 -based gate for high power and high temperature application . / Lee, Jae Seung; Kim, Jong Wook; Shin, Jin Ho; Bae, Sung Bum; Lee, Yong Hyun; Lee, Jung Hee; Kim, Chang Seok; Oh, Jae Eung; Shin, Moo Whan.

In: Journal of the Korean Physical Society, Vol. 39, No. SUPPL. Part 1, 01.12.2001.

Research output: Contribution to journalArticle

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AU - Lee, Jae Seung

AU - Kim, Jong Wook

AU - Shin, Jin Ho

AU - Bae, Sung Bum

AU - Lee, Yong Hyun

AU - Lee, Jung Hee

AU - Kim, Chang Seok

AU - Oh, Jae Eung

AU - Shin, Moo Whan

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Y1 - 2001/12/1

N2 - Al 0.25 Ga 0.75 N/GaN HFETs grown on a sapphire substrate were fabricated using an RuO 2 based Schottky contact. The Schottky contact characteristics for various gate metals, such as RuO 2 /Au, Pt/Au, Ni/Au, and Ni/Pt/Au, were compared, and showed that the RuO 2 /Au metal scheme was superior to the others. RuO 2 -gated AlGaN/GaN HFETs with a 220 Å and 270 Å-thick Al 0.25 Ga 0.75 N layer exhibited a maximum drain current of 689 and 808 mA/mm at V GS = +1 V, respectively. An HFET with a 220 Å-thick Al 0.25 Ga 0.75 N layer exhibited a current gain cut-off frequency of 27 GHz and maximum oscillation frequency of 46 GHz for a gate length of 0.8 μm. The RF output power density for the device was 1.12 W/mm at 1.8 GHz.

AB - Al 0.25 Ga 0.75 N/GaN HFETs grown on a sapphire substrate were fabricated using an RuO 2 based Schottky contact. The Schottky contact characteristics for various gate metals, such as RuO 2 /Au, Pt/Au, Ni/Au, and Ni/Pt/Au, were compared, and showed that the RuO 2 /Au metal scheme was superior to the others. RuO 2 -gated AlGaN/GaN HFETs with a 220 Å and 270 Å-thick Al 0.25 Ga 0.75 N layer exhibited a maximum drain current of 689 and 808 mA/mm at V GS = +1 V, respectively. An HFET with a 220 Å-thick Al 0.25 Ga 0.75 N layer exhibited a current gain cut-off frequency of 27 GHz and maximum oscillation frequency of 46 GHz for a gate length of 0.8 μm. The RF output power density for the device was 1.12 W/mm at 1.8 GHz.

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