We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering