Abstract
We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.
| Original language | English |
|---|---|
| Article number | 6054000 |
| Pages (from-to) | 1704-1706 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2011 Dec 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
}
DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination. / Chang, Youn Gyoung; Moon, Tae Woong; Kim, Dae Hwan; Lee, Hee Sung; Kim, Jae Hoon; Park, Kwon Shik; Kim, Chang Dong; Im, Seongil.
In: IEEE Electron Device Letters, Vol. 32, No. 12, 6054000, 01.12.2011, p. 1704-1706.Research output: Contribution to journal › Article
TY - JOUR
T1 - DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination
AU - Chang, Youn Gyoung
AU - Moon, Tae Woong
AU - Kim, Dae Hwan
AU - Lee, Hee Sung
AU - Kim, Jae Hoon
AU - Park, Kwon Shik
AU - Kim, Chang Dong
AU - Im, Seongil
PY - 2011/12/1
Y1 - 2011/12/1
N2 - We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.
AB - We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.
UR - http://www.scopus.com/inward/record.url?scp=81855206639&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=81855206639&partnerID=8YFLogxK
U2 - 10.1109/LED.2011.2167736
DO - 10.1109/LED.2011.2167736
M3 - Article
AN - SCOPUS:81855206639
VL - 32
SP - 1704
EP - 1706
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 12
M1 - 6054000
ER -