DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination

Youn Gyoung Chang; Tae Woong Moon; Dae Hwan Kim; Hee Sung Lee; Jae Hoon Kim; Kwon Shik Park; Chang Dong Kim; Seongil Im

doi:10.1109/LED.2011.2167736

DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination

Youn Gyoung Chang, Tae Woong Moon, Dae Hwan Kim, Hee Sung Lee, Jae Hoon Kim, Kwon Shik Park, Chang Dong Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.

Original language	English
Article number	6054000
Pages (from-to)	1704-1706
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1109/LED.2011.2167736
Publication status	Published - 2011 Dec

Bibliographical note

Funding Information:
Manuscript received August 10, 2011; revised August 26, 2011; accepted September 3, 2011. Date of publication October 19, 2011; date of current version November 23, 2011. This work was supported in part by the National Research Foundation through the National Research Laboratory Program under Grant 2011-0000375 and through Brain Korea 21 Project. The review of this letter was arranged by Editor A. Flewitt.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2167736

Cite this

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title = "DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination",

abstract = "We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.",

author = "Chang, {Youn Gyoung} and Moon, {Tae Woong} and Kim, {Dae Hwan} and Lee, {Hee Sung} and Kim, {Jae Hoon} and Park, {Kwon Shik} and Kim, {Chang Dong} and Seongil Im",

note = "Funding Information: Manuscript received August 10, 2011; revised August 26, 2011; accepted September 3, 2011. Date of publication October 19, 2011; date of current version November 23, 2011. This work was supported in part by the National Research Foundation through the National Research Laboratory Program under Grant 2011-0000375 and through Brain Korea 21 Project. The review of this letter was arranged by Editor A. Flewitt.",

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AU - Chang, Youn Gyoung

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AU - Lee, Hee Sung

AU - Kim, Jae Hoon

AU - Park, Kwon Shik

AU - Kim, Chang Dong

AU - Im, Seongil

N1 - Funding Information: Manuscript received August 10, 2011; revised August 26, 2011; accepted September 3, 2011. Date of publication October 19, 2011; date of current version November 23, 2011. This work was supported in part by the National Research Foundation through the National Research Laboratory Program under Grant 2011-0000375 and through Brain Korea 21 Project. The review of this letter was arranged by Editor A. Flewitt.

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N2 - We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.

AB - We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.

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DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination

Abstract

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