DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination

Youn Gyoung Chang, Tae Woong Moon, Dae Hwan Kim, Hee Sung Lee, Jae Hoon Kim, Kwon Shik Park, Chang Dong Kim, Seongil Im

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.

Original languageEnglish
Article number6054000
Pages (from-to)1704-1706
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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