DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination

Youn Gyoung Chang; Tae Woong Moon; Dae Hwan Kim; Hee Sung Lee; Jae Hoon Kim; Kwon Shik Park; Chang Dong Kim; Seongil Im

doi:10.1109/LED.2011.2167736

DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination

Youn Gyoung Chang, Tae Woong Moon, Dae Hwan Kim, Hee Sung Lee, Jae Hoon Kim, Kwon Shik Park, Chang Dong Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.

Original language	English
Article number	6054000
Pages (from-to)	1704-1706
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1109/LED.2011.2167736
Publication status	Published - 2011 Dec

Bibliographical note

Funding Information:
Manuscript received August 10, 2011; revised August 26, 2011; accepted September 3, 2011. Date of publication October 19, 2011; date of current version November 23, 2011. This work was supported in part by the National Research Foundation through the National Research Laboratory Program under Grant 2011-0000375 and through Brain Korea 21 Project. The review of this letter was arranged by Editor A. Flewitt.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2011.2167736

Fingerprint Dive into the research topics of 'DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination'. Together they form a unique fingerprint.

Cite this

@article{372e1754df7542ed8d0788199d33be58,

title = "DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination",

abstract = "We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.",

author = "Chang, {Youn Gyoung} and Moon, {Tae Woong} and Kim, {Dae Hwan} and Lee, {Hee Sung} and Kim, {Jae Hoon} and Park, {Kwon Shik} and Kim, {Chang Dong} and Seongil Im",

note = "Funding Information: Manuscript received August 10, 2011; revised August 26, 2011; accepted September 3, 2011. Date of publication October 19, 2011; date of current version November 23, 2011. This work was supported in part by the National Research Foundation through the National Research Laboratory Program under Grant 2011-0000375 and through Brain Korea 21 Project. The review of this letter was arranged by Editor A. Flewitt.",

year = "2011",

month = dec,

doi = "10.1109/LED.2011.2167736",

language = "English",

volume = "32",

pages = "1704--1706",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination. / Chang, Youn Gyoung; Moon, Tae Woong; Kim, Dae Hwan; Lee, Hee Sung; Kim, Jae Hoon; Park, Kwon Shik; Kim, Chang Dong; Im, Seongil.

In: IEEE Electron Device Letters, Vol. 32, No. 12, 6054000, 12.2011, p. 1704-1706.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - DC versus pulse-type negative bias stress effects on the instability of amorphous ingazno transistors under light illumination

AU - Chang, Youn Gyoung

AU - Moon, Tae Woong

AU - Kim, Dae Hwan

AU - Lee, Hee Sung

AU - Kim, Jae Hoon

AU - Park, Kwon Shik

AU - Kim, Chang Dong

AU - Im, Seongil

N1 - Funding Information: Manuscript received August 10, 2011; revised August 26, 2011; accepted September 3, 2011. Date of publication October 19, 2011; date of current version November 23, 2011. This work was supported in part by the National Research Foundation through the National Research Laboratory Program under Grant 2011-0000375 and through Brain Korea 21 Project. The review of this letter was arranged by Editor A. Flewitt.

PY - 2011/12

Y1 - 2011/12

N2 - We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.

AB - We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulsed bias stresses, many of photoexcited positive charges might be recombined during the interval between pulses while those charges under dc bias drift to the channel interface without recombination. Interfacial trap density measurements explain the effects of such photoexcited positive charges on the interface.

UR - http://www.scopus.com/inward/record.url?scp=81855206639&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855206639&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2167736

DO - 10.1109/LED.2011.2167736

M3 - Article

AN - SCOPUS:81855206639

VL - 32

SP - 1704

EP - 1706

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

M1 - 6054000

ER -