DCX-band high-power SOI CMOS T/R switch

B. Suh, B. W. Min

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A high-power single-pole double-throw transmit/receive (T/R) switch in a silicon-on-insulation (SOI) CMOS process is presented. The T/R switch is based on the seriesshunt configuration, and the high performance is achieved by utilising SOI characteristics such as floating body transistors and SOI trench (TQ trench). To improve power handling capability, ten thick gate oxide transistors are stacked in transmitter (TX) shunt and receiver (RX) series paths with the source and drain of transistors biased. The measured insertion losses of TX and RX modes are <0.5 and <0.9 dB, respectively. The measured isolations of TX and RX modes are >30 and >23 dB up to 12 GHz. The measured input 1 dB compression point is 34 dBm.

Original languageEnglish
Pages (from-to)937-939
Number of pages3
JournalElectronics Letters
Volume52
Issue number11
DOIs
Publication statusPublished - 2016 May 26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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