Abstract
We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm2/V·sec to 2.15 cm 2/V·sec.
| Original language | English |
|---|---|
| Title of host publication | Society for Information Display - 18th International Display Workshops 2011, IDW'11 |
| Pages | 1685-1688 |
| Number of pages | 4 |
| Publication status | Published - 2011 Dec 1 |
| Event | 18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 2011 Dec 7 → 2011 Dec 9 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 3 |
| ISSN (Print) | 1883-2490 |
Other
| Other | 18th International Display Workshops 2011, IDW 2011 |
|---|---|
| Country | Japan |
| City | Nagoya |
| Period | 11/12/7 → 11/12/9 |
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
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Cite this
Lee, J. S., Choi, S. H., Kuk, S. H., Song, M. K., Kim, Y. H., Kwon, J. Y., & Han, M. K. (2011). Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (pp. 1685-1688). (Proceedings of the International Display Workshops; Vol. 3).