Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature

Jeong Soo Lee; Sung Hwan Choi; Seung Hee Kuk; Moon Kyu Song; Yong Hoon Kim; Jang Yeon Kwon; Min Koo Han

Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature

Jeong Soo Lee, Sung Hwan Choi, Seung Hee Kuk, Moon Kyu Song, Yong Hoon Kim, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm²/V·sec to 2.15 cm ²/V·sec.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	1685-1688
Number of pages	4
Publication status	Published - 2011
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 2011 Dec 7 → 2011 Dec 9

Publication series

Name	Proceedings of the International Display Workshops
Volume	3
ISSN (Print)	1883-2490

Other

Other	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	11/12/7 → 11/12/9

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Lee, J. S., Choi, S. H., Kuk, S. H., Song, M. K., Kim, Y. H., Kwon, J. Y., & Han, M. K. (2011). Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (pp. 1685-1688). (Proceedings of the International Display Workshops; Vol. 3).

@inproceedings{7d94dbf0ab3b45a280a574ba07dda8c6,

title = "Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature",

abstract = "We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm2/V·sec to 2.15 cm 2/V·sec.",

author = "Lee, {Jeong Soo} and Choi, {Sung Hwan} and Kuk, {Seung Hee} and Song, {Moon Kyu} and Kim, {Yong Hoon} and Kwon, {Jang Yeon} and Han, {Min Koo}",

year = "2011",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "1685--1688",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "18th International Display Workshops 2011, IDW 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

Lee, JS, Choi, SH, Kuk, SH, Song, MK, Kim, YH, Kwon, JY & Han, MK 2011, Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, vol. 3, pp. 1685-1688, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 11/12/7.

Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature. / Lee, Jeong Soo; Choi, Sung Hwan; Kuk, Seung Hee et al.

Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 1685-1688 (Proceedings of the International Display Workshops; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature

AU - Lee, Jeong Soo

AU - Choi, Sung Hwan

AU - Kuk, Seung Hee

AU - Song, Moon Kyu

AU - Kim, Yong Hoon

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2011

Y1 - 2011

N2 - We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm2/V·sec to 2.15 cm 2/V·sec.

AB - We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm2/V·sec to 2.15 cm 2/V·sec.

UR - http://www.scopus.com/inward/record.url?scp=84870672960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870672960&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870672960

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 1685

EP - 1688

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

UN SDGs

Other files and links

Fingerprint

Cite this