Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films

Sangwoo Lim, Yukihiro Shimogaki, Yoshiaki Nakano, Kunio Tada, Hiroshi Komiyama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The low dielectric constant of F-doped silicon dioxide film makes it suitable for use as an intermetal film to improve the performance of ultra-large scale integrated circuits (ULSIs). One of the properties required by an intermetal film is good gap filling. It is known that fluorine addition to silicon oxide decreases the film deposition rate and improves the step coverage. In order to investigate these phenomena, we study the reaction mechanism of plasma-enhanced chemical vapor deposition (PECVD) silicon oxide film and its change by fluorine addition. Using a two film-forming species model, we explain the dependence of the deposition rate and the step coverage on the residence time for a SiH4/N2O-based PECVD system. The precursor produced by the dissociation of SiH4 has a relatively high sticking probability (≈0.5), while an intermediate species has a low (< 10-4) sticking probability. The concentration of each species for deposition is changed by the residence time of the gas, thus the deposition rate and the step coverage show dependence on the residence time. The deposition rate of silicon oxide films is decreased and the step coverage is improved by CF4 addition during SiH4/N2O-based PECVD. From the estimation of the sticking probability, we suggest that the reason for the improvement of the step coverage by fluorine addition is not the etching effect by CF4 addition, but the decrease in sticking probability of the precursor produced by the dissociation of SiH4.

Original languageEnglish
Pages (from-to)330-336
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1

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Silicon oxides
Plasma enhanced chemical vapor deposition
Deposition rates
silicon oxides
Oxide films
oxide films
vapor deposition
Fluorine
fluorine
dissociation
integrated circuits
Integrated circuits
Etching
Permittivity
Silica
etching
permittivity
silicon dioxide
Gases
gases

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "The low dielectric constant of F-doped silicon dioxide film makes it suitable for use as an intermetal film to improve the performance of ultra-large scale integrated circuits (ULSIs). One of the properties required by an intermetal film is good gap filling. It is known that fluorine addition to silicon oxide decreases the film deposition rate and improves the step coverage. In order to investigate these phenomena, we study the reaction mechanism of plasma-enhanced chemical vapor deposition (PECVD) silicon oxide film and its change by fluorine addition. Using a two film-forming species model, we explain the dependence of the deposition rate and the step coverage on the residence time for a SiH4/N2O-based PECVD system. The precursor produced by the dissociation of SiH4 has a relatively high sticking probability (≈0.5), while an intermediate species has a low (< 10-4) sticking probability. The concentration of each species for deposition is changed by the residence time of the gas, thus the deposition rate and the step coverage show dependence on the residence time. The deposition rate of silicon oxide films is decreased and the step coverage is improved by CF4 addition during SiH4/N2O-based PECVD. From the estimation of the sticking probability, we suggest that the reason for the improvement of the step coverage by fluorine addition is not the etching effect by CF4 addition, but the decrease in sticking probability of the precursor produced by the dissociation of SiH4.",
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Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films. / Lim, Sangwoo; Shimogaki, Yukihiro; Nakano, Yoshiaki; Tada, Kunio; Komiyama, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 1, 01.01.2000, p. 330-336.

Research output: Contribution to journalArticle

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T1 - Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films

AU - Lim, Sangwoo

AU - Shimogaki, Yukihiro

AU - Nakano, Yoshiaki

AU - Tada, Kunio

AU - Komiyama, Hiroshi

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