Deep-UV Transparent Conducting Oxide La-Doped SrSnO3with a High Figure of Merit

Juhan Kim; Hwanhui Yun; Jihoon Seo; Jae Ha Kim; Jae Hoon Kim; K. Andre Mkhoyan; Bongju Kim; Kookrin Char

doi:10.1021/acsaelm.2c00581

Deep-UV Transparent Conducting Oxide La-Doped SrSnO₃with a High Figure of Merit

Juhan Kim, Hwanhui Yun, Jihoon Seo, Jae Ha Kim, Jae Hoon Kim, K. Andre Mkhoyan, Bongju Kim, Kookrin Char

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Perovskite stannate SrSnO₃(SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO₃(SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic Pnma phase with a^-a^-c⁺in the c⁺direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La-doped SrSnO₃film has a figure of merit (φ_TC= 2.65 × 10^-3ω^-1) at λ = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.

Original language	English
Pages (from-to)	3623-3631
Number of pages	9
Journal	ACS Applied Electronic Materials
Volume	4
Issue number	7
DOIs	https://doi.org/10.1021/acsaelm.2c00581
Publication status	Published - 2022 Jul 26

Bibliographical note

Funding Information:
A part of this study has been performed using facilities at the IBS Center for Correlated Electron Systems, Seoul National University. The electron microscopy effort (H.Y. and K.A.M.) was supported by the NSF through the MRSEC (DMR-2011401). Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program. This work at Yonsei University was supported by the National Research Foundation (NRF) grants funded by the Korean government (MSIT; grant 2021R1A2C3004989) and the SRC program (vdWMRC; grant 2017R1A5A1014862).

Publisher Copyright:
© 2022 American Chemical Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrochemistry

Access to Document

10.1021/acsaelm.2c00581

Cite this

@article{d71f6e7731a241a481ee4e3801ae08b1,

title = "Deep-UV Transparent Conducting Oxide La-Doped SrSnO3with a High Figure of Merit",

abstract = "Perovskite stannate SrSnO3(SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO3(SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic Pnma phase with a-a-c+in the c+direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La-doped SrSnO3film has a figure of merit (φTC= 2.65 × 10-3ω-1) at λ = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.",

author = "Juhan Kim and Hwanhui Yun and Jihoon Seo and Kim, {Jae Ha} and Kim, {Jae Hoon} and Mkhoyan, {K. Andre} and Bongju Kim and Kookrin Char",

note = "Funding Information: A part of this study has been performed using facilities at the IBS Center for Correlated Electron Systems, Seoul National University. The electron microscopy effort (H.Y. and K.A.M.) was supported by the NSF through the MRSEC (DMR-2011401). Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program. This work at Yonsei University was supported by the National Research Foundation (NRF) grants funded by the Korean government (MSIT; grant 2021R1A2C3004989) and the SRC program (vdWMRC; grant 2017R1A5A1014862). Publisher Copyright: {\textcopyright} 2022 American Chemical Society.",

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T1 - Deep-UV Transparent Conducting Oxide La-Doped SrSnO3with a High Figure of Merit

AU - Kim, Juhan

AU - Yun, Hwanhui

AU - Seo, Jihoon

AU - Kim, Jae Ha

AU - Kim, Jae Hoon

AU - Mkhoyan, K. Andre

AU - Kim, Bongju

AU - Char, Kookrin

N1 - Funding Information: A part of this study has been performed using facilities at the IBS Center for Correlated Electron Systems, Seoul National University. The electron microscopy effort (H.Y. and K.A.M.) was supported by the NSF through the MRSEC (DMR-2011401). Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program. This work at Yonsei University was supported by the National Research Foundation (NRF) grants funded by the Korean government (MSIT; grant 2021R1A2C3004989) and the SRC program (vdWMRC; grant 2017R1A5A1014862). Publisher Copyright: © 2022 American Chemical Society.

PY - 2022/7/26

Y1 - 2022/7/26

N2 - Perovskite stannate SrSnO3(SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO3(SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic Pnma phase with a-a-c+in the c+direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La-doped SrSnO3film has a figure of merit (φTC= 2.65 × 10-3ω-1) at λ = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.

AB - Perovskite stannate SrSnO3(SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO3(SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic Pnma phase with a-a-c+in the c+direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La-doped SrSnO3film has a figure of merit (φTC= 2.65 × 10-3ω-1) at λ = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.

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