Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates

S. W. Kim, Y. D. Cho, C. S. Shin, W. K. Park, D. H. Kim, Dae Hong Ko

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The defects of GaAs layers grown on Si (001) substrate with patterned SiO2structures were investigated using transmission electron microscopy. The compressive strain along the 〈110〉 direction was induced in selectively grown GaAs epilayers.The defects such as stacking faults or microtwins were trapped near the GaAs/Si interface, over which defect free GaAs regions were formed from the middle of trench walls. It is suggested that the residual compressive strain in defect free GaAs layers is due to the patterned SiO2structures.

Original languageEnglish
Pages (from-to)319-322
Number of pages4
JournalJournal of Crystal Growth
Volume401
DOIs
Publication statusPublished - 2014 Sep 1

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Defects
defects
Substrates
Epilayers
Stacking faults
crystal defects
Transmission electron microscopy
transmission electron microscopy
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kim, S. W. ; Cho, Y. D. ; Shin, C. S. ; Park, W. K. ; Kim, D. H. ; Ko, Dae Hong. / Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates. In: Journal of Crystal Growth. 2014 ; Vol. 401. pp. 319-322.
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Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates. / Kim, S. W.; Cho, Y. D.; Shin, C. S.; Park, W. K.; Kim, D. H.; Ko, Dae Hong.

In: Journal of Crystal Growth, Vol. 401, 01.09.2014, p. 319-322.

Research output: Contribution to journalArticle

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