The defects of GaAs layers grown on Si (001) substrate with patterned SiO2structures were investigated using transmission electron microscopy. The compressive strain along the 〈110〉 direction was induced in selectively grown GaAs epilayers.The defects such as stacking faults or microtwins were trapped near the GaAs/Si interface, over which defect free GaAs regions were formed from the middle of trench walls. It is suggested that the residual compressive strain in defect free GaAs layers is due to the patterned SiO2structures.
Bibliographical noteFunding Information:
This work was financially supported by the “ R&D Program for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (Grant no. 10045216 )”. The authors thank SEMATECH for assistance with STI patterned wafer preparation.
© 2014 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry