Defect analysis and performance evaluation of p-type epitaxial GaAs layer on Ge substrate for GaAs/Ge based advanced device

Goutam Kumar Dalapati, Vignesh Suresh, Sandipan Chakraborty, Chandreswar Mahata, Yi Ren, Thirumaleshawara Bhat, Sudhiranjan Tripathy, Taeyoon Lee, Lakshmi Kanta Bera, Dongzhi Chi

Research output: Contribution to journalArticle

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Abstract

The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide and structural quality of the epi-GaAs layer. P-type epitaxial-GaAs was grown on Ge substrate using MOCVD technique at 675°C. Defective surface native oxides of arsenic and gallium oxides are observed for as-grown epi-GaAs layer. The arsenic oxide significantly reduced after thermal treatment as seen from XPS observations. The structural defects at surface enhanced after thermal treatment which is clearly probed by micro-Raman spectroscopy. Atomic layer deposited (ALD) Al2O3 significantly improved the interface properties after thermal treatment compared with bare epi-GaAs layer. Even though, the interface trap defect density slightly higher for p-type epi-GaAs MOS capacitor compared with bulk p-type GaAs devices, high frequency-dispersion in epi-GaAs based devices observed. This is mainly governs through the formation of p-i-n junction diode in the epi-GaAs layer on Ge substrates.

Original languageEnglish
Pages (from-to)517-524
Number of pages8
JournalAdvanced Materials Letters
Volume7
Issue number7
DOIs
Publication statusPublished - 2016 Jul 1

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Epitaxial layers
Defects
Oxides
Heat treatment
Substrates
Arsenic
MOS capacitors
Defect density
Metallorganic chemical vapor deposition
Gallium
Raman spectroscopy
Diodes
X ray photoelectron spectroscopy
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Dalapati, Goutam Kumar ; Suresh, Vignesh ; Chakraborty, Sandipan ; Mahata, Chandreswar ; Ren, Yi ; Bhat, Thirumaleshawara ; Tripathy, Sudhiranjan ; Lee, Taeyoon ; Bera, Lakshmi Kanta ; Chi, Dongzhi. / Defect analysis and performance evaluation of p-type epitaxial GaAs layer on Ge substrate for GaAs/Ge based advanced device. In: Advanced Materials Letters. 2016 ; Vol. 7, No. 7. pp. 517-524.
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Dalapati, GK, Suresh, V, Chakraborty, S, Mahata, C, Ren, Y, Bhat, T, Tripathy, S, Lee, T, Bera, LK & Chi, D 2016, 'Defect analysis and performance evaluation of p-type epitaxial GaAs layer on Ge substrate for GaAs/Ge based advanced device', Advanced Materials Letters, vol. 7, no. 7, pp. 517-524. https://doi.org/10.5185/amlett.2016.6439

Defect analysis and performance evaluation of p-type epitaxial GaAs layer on Ge substrate for GaAs/Ge based advanced device. / Dalapati, Goutam Kumar; Suresh, Vignesh; Chakraborty, Sandipan; Mahata, Chandreswar; Ren, Yi; Bhat, Thirumaleshawara; Tripathy, Sudhiranjan; Lee, Taeyoon; Bera, Lakshmi Kanta; Chi, Dongzhi.

In: Advanced Materials Letters, Vol. 7, No. 7, 01.07.2016, p. 517-524.

Research output: Contribution to journalArticle

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T1 - Defect analysis and performance evaluation of p-type epitaxial GaAs layer on Ge substrate for GaAs/Ge based advanced device

AU - Dalapati, Goutam Kumar

AU - Suresh, Vignesh

AU - Chakraborty, Sandipan

AU - Mahata, Chandreswar

AU - Ren, Yi

AU - Bhat, Thirumaleshawara

AU - Tripathy, Sudhiranjan

AU - Lee, Taeyoon

AU - Bera, Lakshmi Kanta

AU - Chi, Dongzhi

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N2 - The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide and structural quality of the epi-GaAs layer. P-type epitaxial-GaAs was grown on Ge substrate using MOCVD technique at 675°C. Defective surface native oxides of arsenic and gallium oxides are observed for as-grown epi-GaAs layer. The arsenic oxide significantly reduced after thermal treatment as seen from XPS observations. The structural defects at surface enhanced after thermal treatment which is clearly probed by micro-Raman spectroscopy. Atomic layer deposited (ALD) Al2O3 significantly improved the interface properties after thermal treatment compared with bare epi-GaAs layer. Even though, the interface trap defect density slightly higher for p-type epi-GaAs MOS capacitor compared with bulk p-type GaAs devices, high frequency-dispersion in epi-GaAs based devices observed. This is mainly governs through the formation of p-i-n junction diode in the epi-GaAs layer on Ge substrates.

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