Doping of van der Waals layered semiconductor materials is an essential technique to realize their full potential for implementation in nanoelectronics. Herein, defect-engineered and area-selective n-doping of ambipolar multi-layer WSe2 are demonstrated via Ar plasma treatment. The contact regions of the WSe2 are exposed to a mild Ar plasma treatment to induce Se vacancy, while the channel region is protected by a hexagonal boron nitride. The results are systematically analyzed using structural and optical characterization methods, and the origin of the n-type properties in the plasma-treated WSe2 is proposed using plane-wave density functional theory calculations. The formation of a defect-induced donor level in the source and drain regions of the multi-layer WSe2 helps to improve the contact behaviors in field-effect transistors (FETs), enhancing the transport of the free electrons. The n-channel current on/off ratio (from 12.8 to 8.3 × 106) and contact resistance (as low as 2.68 kΩ∙mm) of the n-type WSe2 FETs are greatly improved by the area-specific Ar plasma treatment, enabling the fabrication of a WSe2-based complementary metal-oxide-semiconductor inverter. This method provides a viable route to control the carrier type and concentration in ambipolar van der Waals layered semiconductors, paving the way for high-performance nanoelectronic devices.
|Journal||Advanced Materials Interfaces|
|Publication status||Published - 2021 Jul 23|
Bibliographical noteFunding Information:
J.K. and H.P. contributed equally to this work. The research at Korea University was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Korea (20172010104830) and the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT (2018R1D1A1A09083917 and 2020M3H4A3081799).
© 2021 Wiley-VCH GmbH
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering