Defect-Free Copolymer Gate Dielectrics for Gating MoS 2 Transistors

Min Je Kim, Yongsuk Choi, Jihoo Seok, Sungjoo Lee, Young Jun Kim, Jun Young Lee, Jeong Ho Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, the poly(2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane-co-cyclohexyl methacrylate) [p(V4D4-co-CHMA)] copolymer was developed for use as a gate dielectric in molybdenum disulfide (MoS 2 ) field-effect transistors (FETs). The p(V4D4-co-CHMA) copolymer was synthesized via the initiated chemical vapor deposition (iCVD) of two types of monomers: 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4) and cyclohexyl methacrylate (CHMA). Four vinyl groups of V4D4 monomers and cyclohexyl groups of CHMA monomers were introduced to enhance the electrical strength of gate dielectrics through the formation of a highly crosslinked network and to reduce the charge trap densities at the MoS 2 -dielectric interface, respectively. The iCVD-grown p(V4D4-co-CHMA) copolymer films yielded a dielectric constant of 2.3 and a leakage current of 3.8 × 10 -11 A/cm 2 at 1 MV/cm. The resulting MoS 2 FETs with p(V4D4-co-CHMA) gate dielectrics exhibited excellent electrical properties, including an electron mobility of 35.1 cm 2 /V s, a subthreshold swing of 0.2 V/dec, and an on-off current ratio of 2.6 × 10 6 . In addition, the environmental and operational stabilities of MoS 2 FETs with p(V4D4-co-CHMA) top-gate dielectrics were superior to those of devices with SiO 2 back-gate dielectrics. The use of iCVD-grown copolymer gate dielectrics as demonstrated in this study provides a novel approach to realizing next-generation two-dimensional electronics.

Original languageEnglish
Pages (from-to)12193-12199
Number of pages7
JournalJournal of Physical Chemistry C
Volume122
Issue number23
DOIs
Publication statusPublished - 2018 Jun 14

Fingerprint

Methacrylates
Gate dielectrics
copolymers
Transistors
transistors
Copolymers
Defects
defects
Field effect transistors
Chemical vapor deposition
Monomers
field effect transistors
monomers
vapor deposition
molybdenum disulfides
Electron mobility
Leakage currents
Molybdenum
electron mobility
Electric properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Kim, Min Je ; Choi, Yongsuk ; Seok, Jihoo ; Lee, Sungjoo ; Kim, Young Jun ; Lee, Jun Young ; Cho, Jeong Ho. / Defect-Free Copolymer Gate Dielectrics for Gating MoS 2 Transistors In: Journal of Physical Chemistry C. 2018 ; Vol. 122, No. 23. pp. 12193-12199.
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Defect-Free Copolymer Gate Dielectrics for Gating MoS 2 Transistors . / Kim, Min Je; Choi, Yongsuk; Seok, Jihoo; Lee, Sungjoo; Kim, Young Jun; Lee, Jun Young; Cho, Jeong Ho.

In: Journal of Physical Chemistry C, Vol. 122, No. 23, 14.06.2018, p. 12193-12199.

Research output: Contribution to journalArticle

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T1 - Defect-Free Copolymer Gate Dielectrics for Gating MoS 2 Transistors

AU - Kim, Min Je

AU - Choi, Yongsuk

AU - Seok, Jihoo

AU - Lee, Sungjoo

AU - Kim, Young Jun

AU - Lee, Jun Young

AU - Cho, Jeong Ho

PY - 2018/6/14

Y1 - 2018/6/14

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AB - In this study, the poly(2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane-co-cyclohexyl methacrylate) [p(V4D4-co-CHMA)] copolymer was developed for use as a gate dielectric in molybdenum disulfide (MoS 2 ) field-effect transistors (FETs). The p(V4D4-co-CHMA) copolymer was synthesized via the initiated chemical vapor deposition (iCVD) of two types of monomers: 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4) and cyclohexyl methacrylate (CHMA). Four vinyl groups of V4D4 monomers and cyclohexyl groups of CHMA monomers were introduced to enhance the electrical strength of gate dielectrics through the formation of a highly crosslinked network and to reduce the charge trap densities at the MoS 2 -dielectric interface, respectively. The iCVD-grown p(V4D4-co-CHMA) copolymer films yielded a dielectric constant of 2.3 and a leakage current of 3.8 × 10 -11 A/cm 2 at 1 MV/cm. The resulting MoS 2 FETs with p(V4D4-co-CHMA) gate dielectrics exhibited excellent electrical properties, including an electron mobility of 35.1 cm 2 /V s, a subthreshold swing of 0.2 V/dec, and an on-off current ratio of 2.6 × 10 6 . In addition, the environmental and operational stabilities of MoS 2 FETs with p(V4D4-co-CHMA) top-gate dielectrics were superior to those of devices with SiO 2 back-gate dielectrics. The use of iCVD-grown copolymer gate dielectrics as demonstrated in this study provides a novel approach to realizing next-generation two-dimensional electronics.

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