Defect-minimized SiGe layer using ion beam synthesis

Seongil Im, Jack Washburn, Ronald Gronsky, Nathan W. Cheung, Kin Man Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Ion Beam Synthesis for SiGe layers was performed to study the end-of-range(EOR) defects and strain-induced dislocations. High Ge doses of 5×1016/cm2, 3×1016/cm2 and 2×1016/cm2 at 120 keV were implanted to obtain 12 at%, 7 at% and 5 at% of Ge peak concentrations respectively. RBS spectra show a projected range(Rp) at a depth of 65nm and an amorphous thickness of 170nm on a wafer with 12 at% of Ge peak concentration. Ge ion implantation was performed both at room temperature(RT) and at liquid nitrogen temperature(LNT), in order to investigate the effect of implantation temperature on reducing EOR defect density. Solid phase epitaxial(SPE) annealing for all SiGe layers was done in nitrogen ambient at 800°C. The EOR defect density is considerably reduced by LNT implantation and the strain-induced dislocations have a threshold Ge peak concentration(about 6 at%) for their abrupt generation. For SiGe layer with 12 at% Ge peak concentration, the amorphous-crystalline(a/c) interfacial morphology changes from a planar interface into a faceted interface during SPE growth at 550°C.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages249-254
Number of pages6
Volume279
ISBN (Print)1558991743
Publication statusPublished - 1993 Jan 1
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: 1992 Nov 301992 Dec 4

Other

OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period92/11/3092/12/4

Fingerprint

Ion beams
Defects
Defect density
Liquid nitrogen
Temperature
Epitaxial growth
Ion implantation
Nitrogen
Annealing
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Im, S., Washburn, J., Gronsky, R., Cheung, N. W., & Yu, K. M. (1993). Defect-minimized SiGe layer using ion beam synthesis. In Materials Research Society Symposium Proceedings (Vol. 279, pp. 249-254). Publ by Materials Research Society.
Im, Seongil ; Washburn, Jack ; Gronsky, Ronald ; Cheung, Nathan W. ; Yu, Kin Man. / Defect-minimized SiGe layer using ion beam synthesis. Materials Research Society Symposium Proceedings. Vol. 279 Publ by Materials Research Society, 1993. pp. 249-254
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abstract = "Ion Beam Synthesis for SiGe layers was performed to study the end-of-range(EOR) defects and strain-induced dislocations. High Ge doses of 5×1016/cm2, 3×1016/cm2 and 2×1016/cm2 at 120 keV were implanted to obtain 12 at{\%}, 7 at{\%} and 5 at{\%} of Ge peak concentrations respectively. RBS spectra show a projected range(Rp) at a depth of 65nm and an amorphous thickness of 170nm on a wafer with 12 at{\%} of Ge peak concentration. Ge ion implantation was performed both at room temperature(RT) and at liquid nitrogen temperature(LNT), in order to investigate the effect of implantation temperature on reducing EOR defect density. Solid phase epitaxial(SPE) annealing for all SiGe layers was done in nitrogen ambient at 800°C. The EOR defect density is considerably reduced by LNT implantation and the strain-induced dislocations have a threshold Ge peak concentration(about 6 at{\%}) for their abrupt generation. For SiGe layer with 12 at{\%} Ge peak concentration, the amorphous-crystalline(a/c) interfacial morphology changes from a planar interface into a faceted interface during SPE growth at 550°C.",
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Im, S, Washburn, J, Gronsky, R, Cheung, NW & Yu, KM 1993, Defect-minimized SiGe layer using ion beam synthesis. in Materials Research Society Symposium Proceedings. vol. 279, Publ by Materials Research Society, pp. 249-254, Beam Solid Interactions: Fundamentals and Applications, Boston, MA, USA, 92/11/30.

Defect-minimized SiGe layer using ion beam synthesis. / Im, Seongil; Washburn, Jack; Gronsky, Ronald; Cheung, Nathan W.; Yu, Kin Man.

Materials Research Society Symposium Proceedings. Vol. 279 Publ by Materials Research Society, 1993. p. 249-254.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Ion Beam Synthesis for SiGe layers was performed to study the end-of-range(EOR) defects and strain-induced dislocations. High Ge doses of 5×1016/cm2, 3×1016/cm2 and 2×1016/cm2 at 120 keV were implanted to obtain 12 at%, 7 at% and 5 at% of Ge peak concentrations respectively. RBS spectra show a projected range(Rp) at a depth of 65nm and an amorphous thickness of 170nm on a wafer with 12 at% of Ge peak concentration. Ge ion implantation was performed both at room temperature(RT) and at liquid nitrogen temperature(LNT), in order to investigate the effect of implantation temperature on reducing EOR defect density. Solid phase epitaxial(SPE) annealing for all SiGe layers was done in nitrogen ambient at 800°C. The EOR defect density is considerably reduced by LNT implantation and the strain-induced dislocations have a threshold Ge peak concentration(about 6 at%) for their abrupt generation. For SiGe layer with 12 at% Ge peak concentration, the amorphous-crystalline(a/c) interfacial morphology changes from a planar interface into a faceted interface during SPE growth at 550°C.

AB - Ion Beam Synthesis for SiGe layers was performed to study the end-of-range(EOR) defects and strain-induced dislocations. High Ge doses of 5×1016/cm2, 3×1016/cm2 and 2×1016/cm2 at 120 keV were implanted to obtain 12 at%, 7 at% and 5 at% of Ge peak concentrations respectively. RBS spectra show a projected range(Rp) at a depth of 65nm and an amorphous thickness of 170nm on a wafer with 12 at% of Ge peak concentration. Ge ion implantation was performed both at room temperature(RT) and at liquid nitrogen temperature(LNT), in order to investigate the effect of implantation temperature on reducing EOR defect density. Solid phase epitaxial(SPE) annealing for all SiGe layers was done in nitrogen ambient at 800°C. The EOR defect density is considerably reduced by LNT implantation and the strain-induced dislocations have a threshold Ge peak concentration(about 6 at%) for their abrupt generation. For SiGe layer with 12 at% Ge peak concentration, the amorphous-crystalline(a/c) interfacial morphology changes from a planar interface into a faceted interface during SPE growth at 550°C.

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Im S, Washburn J, Gronsky R, Cheung NW, Yu KM. Defect-minimized SiGe layer using ion beam synthesis. In Materials Research Society Symposium Proceedings. Vol. 279. Publ by Materials Research Society. 1993. p. 249-254