Defect reduction and dopant activation of in situ phosphorus-doped silicon on a (111) silicon substrate using nanosecond laser annealing

Hyunsu Shin, Juhee Lee, Eunjung Ko, Eunha Kim, Dae Hong Ko

Research output: Contribution to journalArticlepeer-review

Abstract

In situ phosphorus-doped silicon (ISPD) has been actively investigated as a source/drain material. However, defect formation during the epitaxial growth of ISPD layers in 3D structures deteriorate the device performance. In this study, we investigate the elimination of inherent defects in ISPD layers using nanosecond laser annealing (NLA). High-density twin- and stacking-fault defects in the ISPD layers cause strain relaxation and dopant deactivation. The NLA process dramatically reduces or eliminates the defects, consequently generating the strain and electrically activating the incorporated phosphorous. The ISPD epitaxial growth and subsequent NLA processes will be robust methods for the fabrication of advanced 3D devices.

Original languageEnglish
Article number021001
JournalApplied Physics Express
Volume14
Issue number2
DOIs
Publication statusPublished - 2021 Feb

Bibliographical note

Funding Information:
This work was supported by the Future Semiconductor Device Technology Development Program (10067739, 20010752) funded by the Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC).

Funding Information:
Acknowledgments This work was supported by the Future Semiconductor Device Technology Development Program (10067739, 20010752) funded by the Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC).

Publisher Copyright:
© 2021 The Japan Society of Applied Physics

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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