Defect reduction and dopant activation of in situ phosphorus-doped silicon on a (111) silicon substrate using nanosecond laser annealing

Engineering

• Defects 83%
• Nanosecond 66%
• Silicon Layer 50%
• Annealing Process 33%
• Strain 33%
• Fabrication 16%
• Dopants 16%
• Annealing 16%
• Device Performance 16%
• Silicon Substrate 16%
• Dopant Activation 16%
• Strain Relaxation 16%
• Reduction 16%
• High Density 16%

Material Science

• Silicon 100%
• Defect 83%
• Laser 66%
• Epitaxy 33%
• Doping (Additives) 16%
• Stacking Fault 16%
• Material 16%
• Devices 16%