Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing

You Seung Rim, Wooho Jeong, Byung Du Ahn, Hyun Jae Kim

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

We investigated the effects of high-pressure water vapor annealing (WHPA) under negative bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film transistors. WHPA could improve device reliability and reduce the hump occurrence. It was attributed to the effective reduction and passivation in oxygen vacancies under WHPA. By comparing the experimental and technology computer-aided design simulation, we could confirm that the low-density of deep-donor-like oxygen vacancy (Vo) states near the valance band maximum contributed to the reduction of photo-excited single ionized oxygen vacancies (Vo) and double ionized oxygen vacancies (Vo2) as shallow-donor states near the conduction band minimum.

Original languageEnglish
Article number143503
JournalApplied Physics Letters
Volume102
Issue number14
DOIs
Publication statusPublished - 2013 Apr 8

Fingerprint

water vapor
transistors
annealing
defects
photons
oxygen
thin films
computer aided design
passivity
conduction bands
incidence
illumination
occurrences
simulation
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We investigated the effects of high-pressure water vapor annealing (WHPA) under negative bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film transistors. WHPA could improve device reliability and reduce the hump occurrence. It was attributed to the effective reduction and passivation in oxygen vacancies under WHPA. By comparing the experimental and technology computer-aided design simulation, we could confirm that the low-density of deep-donor-like oxygen vacancy (Vo) states near the valance band maximum contributed to the reduction of photo-excited single ionized oxygen vacancies (Vo) and double ionized oxygen vacancies (Vo2) as shallow-donor states near the conduction band minimum.",
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Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing. / Rim, You Seung; Jeong, Wooho; Ahn, Byung Du; Kim, Hyun Jae.

In: Applied Physics Letters, Vol. 102, No. 14, 143503, 08.04.2013.

Research output: Contribution to journalArticle

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