We investigated the effects of high-pressure water vapor annealing (WHPA) under negative bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film transistors. WHPA could improve device reliability and reduce the hump occurrence. It was attributed to the effective reduction and passivation in oxygen vacancies under WHPA. By comparing the experimental and technology computer-aided design simulation, we could confirm that the low-density of deep-donor-like oxygen vacancy (Vo) states near the valance band maximum contributed to the reduction of photo-excited single ionized oxygen vacancies (Vo) and double ionized oxygen vacancies (Vo2) as shallow-donor states near the conduction band minimum.
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10041808, Synthesis of Oxide Semiconductor and Insulator Ink Materials and Process Development for Printed Backplane of Flexible Displays Processed Below 150 °C) funded by the Ministry of Knowledge Economy (MKE, Korea) and Samsung Display [2012-8-0898].
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)