Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing

You Seung Rim; Wooho Jeong; Byung Du Ahn; Hyun Jae Kim

doi:10.1063/1.4801436

Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing

You Seung Rim, Wooho Jeong, Byung Du Ahn, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

We investigated the effects of high-pressure water vapor annealing (WHPA) under negative bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film transistors. WHPA could improve device reliability and reduce the hump occurrence. It was attributed to the effective reduction and passivation in oxygen vacancies under WHPA. By comparing the experimental and technology computer-aided design simulation, we could confirm that the low-density of deep-donor-like oxygen vacancy (V_o) states near the valance band maximum contributed to the reduction of photo-excited single ionized oxygen vacancies (V_o) and double ionized oxygen vacancies (V_o²) as shallow-donor states near the conduction band minimum.

Original language	English
Article number	143503
Journal	Applied Physics Letters
Volume	102
Issue number	14
DOIs	https://doi.org/10.1063/1.4801436
Publication status	Published - 2013 Apr 8

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10041808, Synthesis of Oxide Semiconductor and Insulator Ink Materials and Process Development for Printed Backplane of Flexible Displays Processed Below 150 °C) funded by the Ministry of Knowledge Economy (MKE, Korea) and Samsung Display [2012-8-0898].

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4801436

Cite this

@article{8eaebcf9ad884e51ac731415bf8569ca,

title = "Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing",

abstract = "We investigated the effects of high-pressure water vapor annealing (WHPA) under negative bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film transistors. WHPA could improve device reliability and reduce the hump occurrence. It was attributed to the effective reduction and passivation in oxygen vacancies under WHPA. By comparing the experimental and technology computer-aided design simulation, we could confirm that the low-density of deep-donor-like oxygen vacancy (Vo) states near the valance band maximum contributed to the reduction of photo-excited single ionized oxygen vacancies (Vo) and double ionized oxygen vacancies (Vo2) as shallow-donor states near the conduction band minimum.",

author = "Rim, {You Seung} and Wooho Jeong and Ahn, {Byung Du} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10041808, Synthesis of Oxide Semiconductor and Insulator Ink Materials and Process Development for Printed Backplane of Flexible Displays Processed Below 150 °C) funded by the Ministry of Knowledge Economy (MKE, Korea) and Samsung Display [2012-8-0898].",

year = "2013",

month = apr,

day = "8",

doi = "10.1063/1.4801436",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing

AU - Rim, You Seung

AU - Jeong, Wooho

AU - Ahn, Byung Du

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10041808, Synthesis of Oxide Semiconductor and Insulator Ink Materials and Process Development for Printed Backplane of Flexible Displays Processed Below 150 °C) funded by the Ministry of Knowledge Economy (MKE, Korea) and Samsung Display [2012-8-0898].

PY - 2013/4/8

Y1 - 2013/4/8

N2 - We investigated the effects of high-pressure water vapor annealing (WHPA) under negative bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film transistors. WHPA could improve device reliability and reduce the hump occurrence. It was attributed to the effective reduction and passivation in oxygen vacancies under WHPA. By comparing the experimental and technology computer-aided design simulation, we could confirm that the low-density of deep-donor-like oxygen vacancy (Vo) states near the valance band maximum contributed to the reduction of photo-excited single ionized oxygen vacancies (Vo) and double ionized oxygen vacancies (Vo2) as shallow-donor states near the conduction band minimum.

AB - We investigated the effects of high-pressure water vapor annealing (WHPA) under negative bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film transistors. WHPA could improve device reliability and reduce the hump occurrence. It was attributed to the effective reduction and passivation in oxygen vacancies under WHPA. By comparing the experimental and technology computer-aided design simulation, we could confirm that the low-density of deep-donor-like oxygen vacancy (Vo) states near the valance band maximum contributed to the reduction of photo-excited single ionized oxygen vacancies (Vo) and double ionized oxygen vacancies (Vo2) as shallow-donor states near the conduction band minimum.

UR - http://www.scopus.com/inward/record.url?scp=84876381140&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876381140&partnerID=8YFLogxK

U2 - 10.1063/1.4801436

DO - 10.1063/1.4801436

M3 - Article

AN - SCOPUS:84876381140

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143503

ER -

Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this