Defect-related luminescence and carrier transport in Ge-implanted SiO2 layers on n-Si and p-Si

Won Seok Lee, Hee Sun Bae, Seongil Im, Hyo Bae Kim, Keun Hwa Chae, Chung Nam Whang, Jong Han Song

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Abstract

Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature, 300, and 500 °C while those of 80 keV were implanted into a SiO2 layer on p-Si. Samples were subsequently annealed at 500 °C for 2 hours to obtain radiative defects from the implantation-induced non-radiative defects in the SiO2. The maximum intensities of sharp violet photoluminescence from the SiO2/n-Si and the SiC2/p-Si samples were observed for samples implanted with doses of 1 × 1016 cm-2 and 5 × 1015 cm-2, respectively. Besides the violet, a broad orange luminescence was seen in the hot-implanted samples. According to the current-voltage (I-V) characteristics, the samples with radiative defects exhibited leakage currents and electroluminescence only in the negative-bias region, regardless of the type of substrate.

Original languageEnglish
Pages (from-to)471-474
Number of pages4
JournalJournal of the Korean Physical Society
Volume37
Issue number4
Publication statusPublished - 2000 Oct 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Lee, W. S., Bae, H. S., Im, S., Kim, H. B., Chae, K. H., Whang, C. N., & Song, J. H. (2000). Defect-related luminescence and carrier transport in Ge-implanted SiO2 layers on n-Si and p-Si. Journal of the Korean Physical Society, 37(4), 471-474.