Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature, 300, and 500 °C while those of 80 keV were implanted into a SiO2 layer on p-Si. Samples were subsequently annealed at 500 °C for 2 hours to obtain radiative defects from the implantation-induced non-radiative defects in the SiO2. The maximum intensities of sharp violet photoluminescence from the SiO2/n-Si and the SiC2/p-Si samples were observed for samples implanted with doses of 1 × 1016 cm-2 and 5 × 1015 cm-2, respectively. Besides the violet, a broad orange luminescence was seen in the hot-implanted samples. According to the current-voltage (I-V) characteristics, the samples with radiative defects exhibited leakage currents and electroluminescence only in the negative-bias region, regardless of the type of substrate.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2000 Oct 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)