Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

J. Y. Jeong, Seongil Im, M. S. Oh, H. B. Kim, K. H. Chae, C. N. Whang, J. H. Song

Research output: Contribution to journalArticle

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Abstract

Silicon nanocrystals have been synthesized in SiO2 matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO2 films grown on crystalline Si at energies of 30-55 keV, and with doses of 5 × 1015, 3 × 1016, and 1 × 1017 cm-2. Implanted samples were subsequently annealed in an N2 ambient at 500-1100°C during various periods. Photoluminescence spectra for the sample implanted with 1 × 1017 cm-2 at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO2 sample is implanted at a substrate temperature of 400°C with an energy of 30keV and a low dose of 5 × 1015 cm-2. It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO2.

Original languageEnglish
Pages (from-to)285-289
Number of pages5
JournalJournal of Luminescence
Volume80
Issue number1-4
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Luminescence
Nanoparticles
Nanocrystals
nanocrystals
Hot Temperature
luminescence
Defects
defects
room temperature
Annealing
Temperature
annealing
Ions
dosage
Silicon
Thick films
Ion implantation
thick films
ion implantation
Photoluminescence

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Biochemistry
  • Condensed Matter Physics

Cite this

Jeong, J. Y. ; Im, Seongil ; Oh, M. S. ; Kim, H. B. ; Chae, K. H. ; Whang, C. N. ; Song, J. H. / Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers. In: Journal of Luminescence. 1998 ; Vol. 80, No. 1-4. pp. 285-289.
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abstract = "Silicon nanocrystals have been synthesized in SiO2 matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO2 films grown on crystalline Si at energies of 30-55 keV, and with doses of 5 × 1015, 3 × 1016, and 1 × 1017 cm-2. Implanted samples were subsequently annealed in an N2 ambient at 500-1100°C during various periods. Photoluminescence spectra for the sample implanted with 1 × 1017 cm-2 at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO2 sample is implanted at a substrate temperature of 400°C with an energy of 30keV and a low dose of 5 × 1015 cm-2. It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO2.",
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Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers. / Jeong, J. Y.; Im, Seongil; Oh, M. S.; Kim, H. B.; Chae, K. H.; Whang, C. N.; Song, J. H.

In: Journal of Luminescence, Vol. 80, No. 1-4, 01.01.1998, p. 285-289.

Research output: Contribution to journalArticle

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T1 - Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

AU - Jeong, J. Y.

AU - Im, Seongil

AU - Oh, M. S.

AU - Kim, H. B.

AU - Chae, K. H.

AU - Whang, C. N.

AU - Song, J. H.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Silicon nanocrystals have been synthesized in SiO2 matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO2 films grown on crystalline Si at energies of 30-55 keV, and with doses of 5 × 1015, 3 × 1016, and 1 × 1017 cm-2. Implanted samples were subsequently annealed in an N2 ambient at 500-1100°C during various periods. Photoluminescence spectra for the sample implanted with 1 × 1017 cm-2 at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO2 sample is implanted at a substrate temperature of 400°C with an energy of 30keV and a low dose of 5 × 1015 cm-2. It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO2.

AB - Silicon nanocrystals have been synthesized in SiO2 matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO2 films grown on crystalline Si at energies of 30-55 keV, and with doses of 5 × 1015, 3 × 1016, and 1 × 1017 cm-2. Implanted samples were subsequently annealed in an N2 ambient at 500-1100°C during various periods. Photoluminescence spectra for the sample implanted with 1 × 1017 cm-2 at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO2 sample is implanted at a substrate temperature of 400°C with an energy of 30keV and a low dose of 5 × 1015 cm-2. It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO2.

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