Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

J. Y. Jeong, S. Im, M. S. Oh, H. B. Kim, K. H. Chae, C. N. Whang, J. H. Song

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Silicon nanocrystals have been synthesized in SiO2 matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO2 films grown on crystalline Si at energies of 30-55 keV, and with doses of 5 × 1015, 3 × 1016, and 1 × 1017 cm-2. Implanted samples were subsequently annealed in an N2 ambient at 500-1100°C during various periods. Photoluminescence spectra for the sample implanted with 1 × 1017 cm-2 at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO2 sample is implanted at a substrate temperature of 400°C with an energy of 30keV and a low dose of 5 × 1015 cm-2. It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO2.

Original languageEnglish
Pages (from-to)285-289
Number of pages5
JournalJournal of Luminescence
Volume80
Issue number1-4
DOIs
Publication statusPublished - 1998 Dec

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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