Defect vs. Nanocrystal luminescence emitted in Si--implanted SiO2 Layer

J. Y. Jeong, S. Im, M. S. Oh, H. B. Kim, K. H. Chae, C. N. Whang, J. H. Song

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 1998
Subtitle of host publication1998 International Microprocesses and Nanotechnology Conference
EditorsHyung Joon Yoo, Shinji Okazaki, Jinho Ahn, Ohyun Kim, Masanori Komuro
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages305-306
Number of pages2
ISBN (Electronic)4930813832, 9784930813831
DOIs
Publication statusPublished - 1998
Event1998 International Microprocesses and Nanotechnology Conference, MNC 1998 - Kyoungju, Korea, Republic of
Duration: 1998 Jul 131998 Jul 16

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference
Volume1998-July

Conference

Conference1998 International Microprocesses and Nanotechnology Conference, MNC 1998
CountryKorea, Republic of
CityKyoungju
Period98/7/1398/7/16

Bibliographical note

Funding Information:
The most interesting results are shown from samples implanted at an elevated temperature of 400 O C with a lower energy of 30 keV and a lower dose of 5 ~ 1 0c'm~-2. A strong luminescence around 600 nm is initially observed with unaided eye from an as-implanted sample, and then vanishes after anneal at 800 "C for 30 min. However, red PL band comes up with weak intensity after anneal at 1100 "C for 30 min. This fact clearly that there exist two different origins for luminescence in Si- implanted Si02. Since the 600 nm band is known as a defect-related band [3], we presume that hot- implantation tends to introduce even more radiative defects to Si02 than RT-implantation does. For confirming above results, glancing x-ray diffractometry and cross-sectional transmission electron microscopy will be performed and the results are to be discussed later in detail. This work was supported by the KOSEF through the Atomic-scale Surface Science Research

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Nuclear and High Energy Physics
  • Computer Science Applications

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