@inproceedings{bc1c8ce069fd466697cb1f732f1b0f54,
title = "Defect vs. Nanocrystal luminescence emitted in Si--implanted SiO2 Layer",
author = "Jeong, {J. Y.} and S. Im and Oh, {M. S.} and Kim, {H. B.} and Chae, {K. H.} and Whang, {C. N.} and Song, {J. H.}",
note = "Funding Information: The most interesting results are shown from samples implanted at an elevated temperature of 400 O C with a lower energy of 30 keV and a lower dose of 5 ~ 1 0c'm~-2. A strong luminescence around 600 nm is initially observed with unaided eye from an as-implanted sample, and then vanishes after anneal at 800 {"}C for 30 min. However, red PL band comes up with weak intensity after anneal at 1100 {"}C for 30 min. This fact clearly that there exist two different origins for luminescence in Si- implanted Si02. Since the 600 nm band is known as a defect-related band [3], we presume that hot- implantation tends to introduce even more radiative defects to Si02 than RT-implantation does. For confirming above results, glancing x-ray diffractometry and cross-sectional transmission electron microscopy will be performed and the results are to be discussed later in detail. This work was supported by the KOSEF through the Atomic-scale Surface Science Research; 1998 International Microprocesses and Nanotechnology Conference, MNC 1998 ; Conference date: 13-07-1998 Through 16-07-1998",
year = "1998",
doi = "10.1109/IMNC.1998.730094",
language = "English",
series = "Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "305--306",
editor = "Yoo, {Hyung Joon} and Shinji Okazaki and Jinho Ahn and Ohyun Kim and Masanori Komuro",
booktitle = "Digest of Papers - Microprocesses and Nanotechnology 1998",
address = "United States",
}