Defects in GaAs bulk crystals and multi-layers caused by in diffusion

P. Werner, Z. Liliental-Weber, H. Sohn, WaiFan Yau, J. Baranowski, E. R. Weber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The objective of this work was to study by transmission electron microscopy the lattice defects in GaAs bulk crystals and heterostructures formed by In diffusion. In such samples hints for the existence of superconductivity have been found. Indium was found to move more than 100 micrometer into bulk GaAs during 1 h annealing at 550 °C (such conditions are typical for molecular beam epitaxy growth on GaAs wafers.) This rapid diffusion is accompanied by the creation of dislocation networks and metallic In droplets that show evidence for lattice strain.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsKenneth P. Rodbell, William F. Filter, Harold J. Frost, Paul S. Ho
PublisherPubl by Materials Research Society
Pages487-491
Number of pages5
Volume309
ISBN (Print)1558992057
Publication statusPublished - 1993 Apr 12
EventProceedings of the Symposium on Materials Reliability in Microelectronics III - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 15

Other

OtherProceedings of the Symposium on Materials Reliability in Microelectronics III
CitySan Francisco, CA, USA
Period93/4/1293/4/15

Fingerprint

Defects
Crystals
Crystal defects
Superconductivity
Molecular beam epitaxy
Indium
Heterojunctions
Annealing
Transmission electron microscopy
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Werner, P., Liliental-Weber, Z., Sohn, H., Yau, W., Baranowski, J., & Weber, E. R. (1993). Defects in GaAs bulk crystals and multi-layers caused by in diffusion. In K. P. Rodbell, W. F. Filter, H. J. Frost, & P. S. Ho (Eds.), Materials Research Society Symposium Proceedings (Vol. 309, pp. 487-491). Publ by Materials Research Society.
Werner, P. ; Liliental-Weber, Z. ; Sohn, H. ; Yau, WaiFan ; Baranowski, J. ; Weber, E. R. / Defects in GaAs bulk crystals and multi-layers caused by in diffusion. Materials Research Society Symposium Proceedings. editor / Kenneth P. Rodbell ; William F. Filter ; Harold J. Frost ; Paul S. Ho. Vol. 309 Publ by Materials Research Society, 1993. pp. 487-491
@inproceedings{852c904d86aa4f5ebc826c79e65c5a4f,
title = "Defects in GaAs bulk crystals and multi-layers caused by in diffusion",
abstract = "The objective of this work was to study by transmission electron microscopy the lattice defects in GaAs bulk crystals and heterostructures formed by In diffusion. In such samples hints for the existence of superconductivity have been found. Indium was found to move more than 100 micrometer into bulk GaAs during 1 h annealing at 550 °C (such conditions are typical for molecular beam epitaxy growth on GaAs wafers.) This rapid diffusion is accompanied by the creation of dislocation networks and metallic In droplets that show evidence for lattice strain.",
author = "P. Werner and Z. Liliental-Weber and H. Sohn and WaiFan Yau and J. Baranowski and Weber, {E. R.}",
year = "1993",
month = "4",
day = "12",
language = "English",
isbn = "1558992057",
volume = "309",
pages = "487--491",
editor = "Rodbell, {Kenneth P.} and Filter, {William F.} and Frost, {Harold J.} and Ho, {Paul S.}",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

Werner, P, Liliental-Weber, Z, Sohn, H, Yau, W, Baranowski, J & Weber, ER 1993, Defects in GaAs bulk crystals and multi-layers caused by in diffusion. in KP Rodbell, WF Filter, HJ Frost & PS Ho (eds), Materials Research Society Symposium Proceedings. vol. 309, Publ by Materials Research Society, pp. 487-491, Proceedings of the Symposium on Materials Reliability in Microelectronics III, San Francisco, CA, USA, 93/4/12.

Defects in GaAs bulk crystals and multi-layers caused by in diffusion. / Werner, P.; Liliental-Weber, Z.; Sohn, H.; Yau, WaiFan; Baranowski, J.; Weber, E. R.

Materials Research Society Symposium Proceedings. ed. / Kenneth P. Rodbell; William F. Filter; Harold J. Frost; Paul S. Ho. Vol. 309 Publ by Materials Research Society, 1993. p. 487-491.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Defects in GaAs bulk crystals and multi-layers caused by in diffusion

AU - Werner, P.

AU - Liliental-Weber, Z.

AU - Sohn, H.

AU - Yau, WaiFan

AU - Baranowski, J.

AU - Weber, E. R.

PY - 1993/4/12

Y1 - 1993/4/12

N2 - The objective of this work was to study by transmission electron microscopy the lattice defects in GaAs bulk crystals and heterostructures formed by In diffusion. In such samples hints for the existence of superconductivity have been found. Indium was found to move more than 100 micrometer into bulk GaAs during 1 h annealing at 550 °C (such conditions are typical for molecular beam epitaxy growth on GaAs wafers.) This rapid diffusion is accompanied by the creation of dislocation networks and metallic In droplets that show evidence for lattice strain.

AB - The objective of this work was to study by transmission electron microscopy the lattice defects in GaAs bulk crystals and heterostructures formed by In diffusion. In such samples hints for the existence of superconductivity have been found. Indium was found to move more than 100 micrometer into bulk GaAs during 1 h annealing at 550 °C (such conditions are typical for molecular beam epitaxy growth on GaAs wafers.) This rapid diffusion is accompanied by the creation of dislocation networks and metallic In droplets that show evidence for lattice strain.

UR - http://www.scopus.com/inward/record.url?scp=0027915058&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027915058&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558992057

VL - 309

SP - 487

EP - 491

BT - Materials Research Society Symposium Proceedings

A2 - Rodbell, Kenneth P.

A2 - Filter, William F.

A2 - Frost, Harold J.

A2 - Ho, Paul S.

PB - Publ by Materials Research Society

ER -

Werner P, Liliental-Weber Z, Sohn H, Yau W, Baranowski J, Weber ER. Defects in GaAs bulk crystals and multi-layers caused by in diffusion. In Rodbell KP, Filter WF, Frost HJ, Ho PS, editors, Materials Research Society Symposium Proceedings. Vol. 309. Publ by Materials Research Society. 1993. p. 487-491