Defects in GaAs bulk crystals and multi-layers caused by in diffusion

P. Werner, Z. Liliental-Weber, H. Sohn, Wai Fan Yau, J. Baranowski, E. R. Weber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The objective of this work was to study by transmission electron microscopy the lattice defects in GaAs bulk crystals and heterostructures formed by In diffusion. In such samples hints for the existence of superconductivity have been found. Indium was found to move more than 100 micrometer into bulk GaAs during 1 h annealing at 550 °C (such conditions are typical for molecular beam epitaxy growth on GaAs wafers.) This rapid diffusion is accompanied by the creation of dislocation networks and metallic In droplets that show evidence for lattice strain.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsKenneth P. Rodbell, William F. Filter, Harold J. Frost, Paul S. Ho
PublisherPubl by Materials Research Society
Pages487-491
Number of pages5
ISBN (Print)1558992057
Publication statusPublished - 1993 Jan 1
EventProceedings of the Symposium on Materials Reliability in Microelectronics III - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 15

Publication series

NameMaterials Research Society Symposium Proceedings
Volume309
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Materials Reliability in Microelectronics III
CitySan Francisco, CA, USA
Period93/4/1293/4/15

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Werner, P., Liliental-Weber, Z., Sohn, H., Yau, W. F., Baranowski, J., & Weber, E. R. (1993). Defects in GaAs bulk crystals and multi-layers caused by in diffusion. In K. P. Rodbell, W. F. Filter, H. J. Frost, & P. S. Ho (Eds.), Materials Research Society Symposium Proceedings (pp. 487-491). (Materials Research Society Symposium Proceedings; Vol. 309). Publ by Materials Research Society.