Deformation characteristics of an organic thin film transistor

D. K. Lee, S. C. Lee, Y. G. Seol, J. H. Ahn, N. E. Lee, Y. J. Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

An organic thin film transistor (OTFT) on a flexible substrate with electroplated electrodes has many advantages in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical characteristics of an OTFT with various compressive stress conditions using COMSOL. An analysis model, which was limited to channel, source, and drain, was used to investigate deformation and internal stress concentrations. The channel length is 40 μm and the OTFT structure is a top-contact structure. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. The deformation characteristics of the fabricated OTFT were predicted in terms of strain and internal stress.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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