Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations

D. Jalabert, J. Coraux, H. Renevier, B. Daudin, M. H. Cho, K. B. Chung, D. W. Moon, J. M. Llorens, N. Garro, A. Cros, A. García-Cristóbal

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Abstract

Medium energy ion scattering (MEIS) has been used to measure at the scale of the monolayer the deformation profile of self-organized GaN quantum dots grown on AlN by molecular-beam epitaxy. The effect of capping the GaN dots by a thin layer of AlN has also been studied. It is shown that GaN dots are partially relaxed in every situation. Capping them with AlN has little effect on the basal plane, as expected, but strongly modifies the strain of the upper part of dots. The experimental results are compared with theoretical calculations, allowing one to conclude that GaN quantum dots experience a nonbiaxial strain, which drastically decreases when going from the basal plane up to the apex of the dots.

Original languageEnglish
Article number115301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number11
DOIs
Publication statusPublished - 2005 Sep 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Jalabert, D., Coraux, J., Renevier, H., Daudin, B., Cho, M. H., Chung, K. B., Moon, D. W., Llorens, J. M., Garro, N., Cros, A., & García-Cristóbal, A. (2005). Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations. Physical Review B - Condensed Matter and Materials Physics, 72(11), [115301]. https://doi.org/10.1103/PhysRevB.72.115301