Degradation mechanisms of amorphous ingazno thin-film transistors used in foldable displays by dynamic mechanical stress

Sang Myung Lee, Dongseok Shin, Ilgu Yun

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Foldable displays represent one of the most attractive next-generation display applications. Therefore, it is critical to analyze the effects of mechanical stress on amorphous InGaZnO (a-IGZO) thin-film-transistors (TFTs) in order to apply them to foldable displays. In foldable display applications, the dynamic mechanical stress tests are designed to be carried out using a bending radius of less than 3 mm. In this paper, dynamic mechanical bending stress tests are performed on a-IGZO TFTs using various bending radii and directions in order to examine the instability characteristics of the TFTs. In addition, the degradation mechanisms are investigated using a technology computer-aided design simulation. As a result, we have demonstrated that it is now possible to establish reliable circuit guidelines for using a-IGZO TFTs in foldable display applications.

Original languageEnglish
Article number7769219
Pages (from-to)170-175
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume64
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Amorphous films
Thin film transistors
Display devices
Degradation
Computer aided design
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Degradation mechanisms of amorphous ingazno thin-film transistors used in foldable displays by dynamic mechanical stress. / Lee, Sang Myung; Shin, Dongseok; Yun, Ilgu.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 1, 7769219, 01.01.2017, p. 170-175.

Research output: Contribution to journalArticle

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