Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes

Heung Jae Cho, Se Aug Jang, Yong Soo Kim, Kwan Yong Lim, Jae Geun Oh, Jung Ho Lee, Tae Su Park, Tae Sun Back, Jun Mo Yang, Hong Seon Yang, Hyun Chul Sohn, Jin Woong Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated the effect of post-thermal processing on the gate oxide reliability in nitride/W/WNx/polycrystalline-Si (poly-Si) gated metal-oxide-semiconductor (MOS) capacitors. As the thermal processing became severer, grater development of mechanical stress and degradation of the gate oxide were observed. Microvoids were also found at the triple point between the gate oxide and two poly-Si grains. The wide variation in mechanical stress during post-thermal processing is believed to create the microvoids and generate additional dangling and strained bonds in the oxide and at the SiO 2/Si interface, resulting in the degradation of the gate oxide.

Original languageEnglish
Pages (from-to)2221-2224
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr 1

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Nitrides
nitrides
degradation
Degradation
Oxides
oxides
metal oxide semiconductors
capacitors
Capacitors
Hot Temperature
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Cho, Heung Jae ; Jang, Se Aug ; Kim, Yong Soo ; Lim, Kwan Yong ; Oh, Jae Geun ; Lee, Jung Ho ; Park, Tae Su ; Back, Tae Sun ; Yang, Jun Mo ; Yang, Hong Seon ; Sohn, Hyun Chul ; Kim, Jin Woong. / Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 ; Vol. 44, No. 4 B. pp. 2221-2224.
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abstract = "We investigated the effect of post-thermal processing on the gate oxide reliability in nitride/W/WNx/polycrystalline-Si (poly-Si) gated metal-oxide-semiconductor (MOS) capacitors. As the thermal processing became severer, grater development of mechanical stress and degradation of the gate oxide were observed. Microvoids were also found at the triple point between the gate oxide and two poly-Si grains. The wide variation in mechanical stress during post-thermal processing is believed to create the microvoids and generate additional dangling and strained bonds in the oxide and at the SiO 2/Si interface, resulting in the degradation of the gate oxide.",
author = "Cho, {Heung Jae} and Jang, {Se Aug} and Kim, {Yong Soo} and Lim, {Kwan Yong} and Oh, {Jae Geun} and Lee, {Jung Ho} and Park, {Tae Su} and Back, {Tae Sun} and Yang, {Jun Mo} and Yang, {Hong Seon} and Sohn, {Hyun Chul} and Kim, {Jin Woong}",
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Cho, HJ, Jang, SA, Kim, YS, Lim, KY, Oh, JG, Lee, JH, Park, TS, Back, TS, Yang, JM, Yang, HS, Sohn, HC & Kim, JW 2005, 'Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 44, no. 4 B, pp. 2221-2224. https://doi.org/10.1143/JJAP.44.2221

Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes. / Cho, Heung Jae; Jang, Se Aug; Kim, Yong Soo; Lim, Kwan Yong; Oh, Jae Geun; Lee, Jung Ho; Park, Tae Su; Back, Tae Sun; Yang, Jun Mo; Yang, Hong Seon; Sohn, Hyun Chul; Kim, Jin Woong.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 01.04.2005, p. 2221-2224.

Research output: Contribution to journalArticle

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AU - Cho, Heung Jae

AU - Jang, Se Aug

AU - Kim, Yong Soo

AU - Lim, Kwan Yong

AU - Oh, Jae Geun

AU - Lee, Jung Ho

AU - Park, Tae Su

AU - Back, Tae Sun

AU - Yang, Jun Mo

AU - Yang, Hong Seon

AU - Sohn, Hyun Chul

AU - Kim, Jin Woong

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AB - We investigated the effect of post-thermal processing on the gate oxide reliability in nitride/W/WNx/polycrystalline-Si (poly-Si) gated metal-oxide-semiconductor (MOS) capacitors. As the thermal processing became severer, grater development of mechanical stress and degradation of the gate oxide were observed. Microvoids were also found at the triple point between the gate oxide and two poly-Si grains. The wide variation in mechanical stress during post-thermal processing is believed to create the microvoids and generate additional dangling and strained bonds in the oxide and at the SiO 2/Si interface, resulting in the degradation of the gate oxide.

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