Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes

Heung Jae Cho, Se Aug Jang, Yong Soo Kim, Kwan Yong Lim, Jae Geun Oh, Jung Ho Lee, Tae Su Park, Tae Sun Back, Jun Mo Yang, Hong Seon Yang, Hyun Chul Sohn, Jin Woong Kim

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Abstract

We investigated the effect of post-thermal processing on the gate oxide reliability in nitride/W/WNx/polycrystalline-Si (poly-Si) gated metal-oxide-semiconductor (MOS) capacitors. As the thermal processing became severer, grater development of mechanical stress and degradation of the gate oxide were observed. Microvoids were also found at the triple point between the gate oxide and two poly-Si grains. The wide variation in mechanical stress during post-thermal processing is believed to create the microvoids and generate additional dangling and strained bonds in the oxide and at the SiO 2/Si interface, resulting in the degradation of the gate oxide.

Original languageEnglish
Pages (from-to)2221-2224
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Cho, H. J., Jang, S. A., Kim, Y. S., Lim, K. Y., Oh, J. G., Lee, J. H., Park, T. S., Back, T. S., Yang, J. M., Yang, H. S., Sohn, H. C., & Kim, J. W. (2005). Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(4 B), 2221-2224. https://doi.org/10.1143/JJAP.44.2221