Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime

Chuntaek Park; Ilgu Yun

doi:10.1109/TNANO.2020.2986540

Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime

Chuntaek Park, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this article, the influence of the self-heating effect (SHE) on fin-shaped field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs) was investigated. The AC analysis with the input of a square pulse at the gate electrode was implemented to estimate the effect of SHE on the leakage current characteristics. The high-frequency operating region from 500 MHz to 50 GHz was simulated for the comparison at each different operating frequency. The high operating frequency indicates that there is not enough time to relieve the heat generated by SHE during the off-phase of the pulse. Thus, as the operating frequency increases, the off-state leakage current induced by SHE increases accordingly. The so-called thermal time constant (τ_TH) was examined for both FinFETs and GAAFETs by comparing the thermal resistance (R_TH) and thermal capacitance (C_TH) to minimize SHE on leakage current in the simulation environment.

Original language	English
Article number	9066945
Pages (from-to)	308-314
Number of pages	7
Journal	IEEE Transactions on Nanotechnology
Volume	19
DOIs	https://doi.org/10.1109/TNANO.2020.2986540
Publication status	Published - 2020

Bibliographical note

Funding Information:
Manuscript received January 14, 2020; revised March 4, 2020; accepted April 5, 2020. Date of publication April 14, 2020; date of current version May 5, 2020. This work was supported by the Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), a Brain Korea 21-plus program, Yonsei University. The review of this paper was arranged by the guest editors of the Special Issue on IEDMS 2019. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: pct3957@yonsei.ac.kr; iyun@yonsei.ac.kr). Digital Object Identifier 10.1109/TNANO.2020.2986540

Publisher Copyright:
© 2002-2012 IEEE.

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2020.2986540

Cite this

@article{df35dd2586e84463bc0190563052839b,

title = "Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime",

abstract = "In this article, the influence of the self-heating effect (SHE) on fin-shaped field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs) was investigated. The AC analysis with the input of a square pulse at the gate electrode was implemented to estimate the effect of SHE on the leakage current characteristics. The high-frequency operating region from 500 MHz to 50 GHz was simulated for the comparison at each different operating frequency. The high operating frequency indicates that there is not enough time to relieve the heat generated by SHE during the off-phase of the pulse. Thus, as the operating frequency increases, the off-state leakage current induced by SHE increases accordingly. The so-called thermal time constant (τTH) was examined for both FinFETs and GAAFETs by comparing the thermal resistance (RTH) and thermal capacitance (CTH) to minimize SHE on leakage current in the simulation environment.",

author = "Chuntaek Park and Ilgu Yun",

note = "Funding Information: Manuscript received January 14, 2020; revised March 4, 2020; accepted April 5, 2020. Date of publication April 14, 2020; date of current version May 5, 2020. This work was supported by the Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), a Brain Korea 21-plus program, Yonsei University. The review of this paper was arranged by the guest editors of the Special Issue on IEDMS 2019. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: pct3957@yonsei.ac.kr; iyun@yonsei.ac.kr). Digital Object Identifier 10.1109/TNANO.2020.2986540 Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2020",

doi = "10.1109/TNANO.2020.2986540",

language = "English",

volume = "19",

pages = "308--314",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime

AU - Park, Chuntaek

AU - Yun, Ilgu

N1 - Funding Information: Manuscript received January 14, 2020; revised March 4, 2020; accepted April 5, 2020. Date of publication April 14, 2020; date of current version May 5, 2020. This work was supported by the Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), a Brain Korea 21-plus program, Yonsei University. The review of this paper was arranged by the guest editors of the Special Issue on IEDMS 2019. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: pct3957@yonsei.ac.kr; iyun@yonsei.ac.kr). Digital Object Identifier 10.1109/TNANO.2020.2986540 Publisher Copyright: © 2002-2012 IEEE.

PY - 2020

Y1 - 2020

N2 - In this article, the influence of the self-heating effect (SHE) on fin-shaped field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs) was investigated. The AC analysis with the input of a square pulse at the gate electrode was implemented to estimate the effect of SHE on the leakage current characteristics. The high-frequency operating region from 500 MHz to 50 GHz was simulated for the comparison at each different operating frequency. The high operating frequency indicates that there is not enough time to relieve the heat generated by SHE during the off-phase of the pulse. Thus, as the operating frequency increases, the off-state leakage current induced by SHE increases accordingly. The so-called thermal time constant (τTH) was examined for both FinFETs and GAAFETs by comparing the thermal resistance (RTH) and thermal capacitance (CTH) to minimize SHE on leakage current in the simulation environment.

AB - In this article, the influence of the self-heating effect (SHE) on fin-shaped field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs) was investigated. The AC analysis with the input of a square pulse at the gate electrode was implemented to estimate the effect of SHE on the leakage current characteristics. The high-frequency operating region from 500 MHz to 50 GHz was simulated for the comparison at each different operating frequency. The high operating frequency indicates that there is not enough time to relieve the heat generated by SHE during the off-phase of the pulse. Thus, as the operating frequency increases, the off-state leakage current induced by SHE increases accordingly. The so-called thermal time constant (τTH) was examined for both FinFETs and GAAFETs by comparing the thermal resistance (RTH) and thermal capacitance (CTH) to minimize SHE on leakage current in the simulation environment.

UR - http://www.scopus.com/inward/record.url?scp=85084916287&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85084916287&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2020.2986540

DO - 10.1109/TNANO.2020.2986540

M3 - Article

AN - SCOPUS:85084916287

SN - 1536-125X

VL - 19

SP - 308

EP - 314

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

M1 - 9066945

ER -

Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime

Abstract

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