In this article, the influence of the self-heating effect (SHE) on fin-shaped field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs) was investigated. The AC analysis with the input of a square pulse at the gate electrode was implemented to estimate the effect of SHE on the leakage current characteristics. The high-frequency operating region from 500 MHz to 50 GHz was simulated for the comparison at each different operating frequency. The high operating frequency indicates that there is not enough time to relieve the heat generated by SHE during the off-phase of the pulse. Thus, as the operating frequency increases, the off-state leakage current induced by SHE increases accordingly. The so-called thermal time constant (τTH) was examined for both FinFETs and GAAFETs by comparing the thermal resistance (RTH) and thermal capacitance (CTH) to minimize SHE on leakage current in the simulation environment.
|Number of pages||7|
|Journal||IEEE Transactions on Nanotechnology|
|Publication status||Published - 2020|
Bibliographical noteFunding Information:
Manuscript received January 14, 2020; revised March 4, 2020; accepted April 5, 2020. Date of publication April 14, 2020; date of current version May 5, 2020. This work was supported by the Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), a Brain Korea 21-plus program, Yonsei University. The review of this paper was arranged by the guest editors of the Special Issue on IEDMS 2019. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: firstname.lastname@example.org; email@example.com). Digital Object Identifier 10.1109/TNANO.2020.2986540
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All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering