Degradation of ZnO nanowire devices under the ambient condition

Dong Wook Kim, Soo Han Choi, Hyun Jin Ji, Sang Woo Kim, Seung Eon Moon, So Jung Park, Gyu Tae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Field effect transistors(FETs) made of ZnO nanowires are very sensitive to the gas environment, so that the passivation can be a good way to get reliable nanowire FETs with longer lifetime and the better mobility. The studies on the passivation effects with the positive electron-beam resist was investigated by selectively covering the part of nanowire devices between the electrodes. Reproducible electrical characteristics were recorded, reflecting the stable electrical properties by the passivation which deters the degradation of a device. Considering the defect states of oxide nanowires dominate the charge states, the pre-state just before the passivation process will be crucial to understand the reproducible and controllable device characteristics of nanowire devices.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781605609720
Publication statusPublished - 2008
EventSemiconductor Nanowires-Growth, Physics, Devices and Applications - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


ConferenceSemiconductor Nanowires-Growth, Physics, Devices and Applications
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Degradation of ZnO nanowire devices under the ambient condition'. Together they form a unique fingerprint.

Cite this