Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks

Prashant Majhi; P. Kalra; R. Harris; K. J. Choi; D. Heh; J. Oh; D. Kelly; R. Choi; B. J. Cho; S. Banerjee; W. Tsai; H. Tseng; R. Jammy

doi:10.1109/LED.2007.911987

Demonstration of high-performance PMOSFETs Using Si-Si_x Ge_1-x-Si quantum wells with high-κ metal-gate stacks

Prashant Majhi, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B. J. Cho, S. Banerjee, W. Tsai, H. Tseng, R. Jammy

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Through a systematic approach, PMOSFETs with strained quantum wells (QWs) in the Si-Ge system exhibiting high performance and low off-state leakage currents comparable to optimized gate stacks on Si are demonstrated. The encouraging results are due to selectively depositing Si-Si_(x)Ge_(1-x)-Si heterostructure QWs, where it appears that the critical thickness requirements for these thin films based on the lattice constant mismatch are relaxed. Furthermore, the use of optimal advanced high-κ dielectric and metal-gate electrode helped realize the good device characteristics.

Original language	English
Pages (from-to)	99-101
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	1
DOIs	https://doi.org/10.1109/LED.2007.911987
Publication status	Published - 2008 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2007.911987

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title = "Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks",

abstract = "Through a systematic approach, PMOSFETs with strained quantum wells (QWs) in the Si-Ge system exhibiting high performance and low off-state leakage currents comparable to optimized gate stacks on Si are demonstrated. The encouraging results are due to selectively depositing Si-Si(x)Ge(1-x)-Si heterostructure QWs, where it appears that the critical thickness requirements for these thin films based on the lattice constant mismatch are relaxed. Furthermore, the use of optimal advanced high-κ dielectric and metal-gate electrode helped realize the good device characteristics.",

author = "Prashant Majhi and P. Kalra and R. Harris and Choi, {K. J.} and D. Heh and J. Oh and D. Kelly and R. Choi and Cho, {B. J.} and S. Banerjee and W. Tsai and H. Tseng and R. Jammy",

year = "2008",

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journal = "IEEE Electron Device Letters",

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number = "1",

}

Demonstration of high-performance PMOSFETs Using Si-Si_x Ge_1-x-Si quantum wells with high-κ metal-gate stacks. / Majhi, Prashant; Kalra, P.; Harris, R.; Choi, K. J.; Heh, D.; Oh, J.; Kelly, D.; Choi, R.; Cho, B. J.; Banerjee, S.; Tsai, W.; Tseng, H.; Jammy, R.

In: IEEE Electron Device Letters, Vol. 29, No. 1, 01.2008, p. 99-101.

Research output: Contribution to journal › Article › peer-review

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AU - Majhi, Prashant

AU - Kalra, P.

AU - Harris, R.

AU - Choi, K. J.

AU - Heh, D.

AU - Oh, J.

AU - Kelly, D.

AU - Choi, R.

AU - Cho, B. J.

AU - Banerjee, S.

AU - Tsai, W.

AU - Tseng, H.

AU - Jammy, R.

PY - 2008/1

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AB - Through a systematic approach, PMOSFETs with strained quantum wells (QWs) in the Si-Ge system exhibiting high performance and low off-state leakage currents comparable to optimized gate stacks on Si are demonstrated. The encouraging results are due to selectively depositing Si-Si(x)Ge(1-x)-Si heterostructure QWs, where it appears that the critical thickness requirements for these thin films based on the lattice constant mismatch are relaxed. Furthermore, the use of optimal advanced high-κ dielectric and metal-gate electrode helped realize the good device characteristics.

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