Demonstration of high-performance PMOSFETs Using Si-Si_x Ge_1-x-Si quantum wells with high-κ metal-gate stacks

Engineering

• Gate Stack 66%
• Performance 66%
• Thin Films 33%
• Critical Thickness 33%
• Metal Gate 33%
• Systematic Approach 33%
• Heterostructures 33%
• Lattice Constant 33%
• Ge System 33%
• Thickness Requirement 33%
• Metal Gate Electrode 33%
• Characteristics 33%

Earth and Planetary Sciences

• Quantum Wells 100%
• Dielectrics 33%
• Leakage 33%
• Thin Films 33%
• Proving 33%
• State 33%
• Good 33%

Material Science

• Thin Films 33%
• Dielectric Material 33%
• Lattice Constant 33%
• Devices 33%