High-performance sub-60 nm Si/SiGe (Ge: ∼ 75%)/Si heterostructure quantum well pMOSFETs with a conventional MOSFET process flow, including gate-first high- κ/metal gate stacks with ∼1 nm equivalent oxide thickness, are demonstrated. For the first time, short gate length Lg devices demonstrate not only controlled short channel effects, but also an excellent on-off current (Ion /Ioof ratio (∼5 × 104 at 55-nm Lg. The intrinsic gate delay of these heterostructures is ∼3 ps at Ion/Ioff ∼ 104 OFF-state leakage was minimized by controlling the defects in the epitaxial films. Finally, these short Lf devices, when benchmarked against state-of-the-art Si channel pMOSFETs, appear to be very promising in replacing the Si channel in CMOS scaling.
Bibliographical noteFunding Information:
Manuscript received April 10, 2008; revised June 7, 2008. This work was supported in part by Department of Energy and in part by the Defense Advanced Research Projects Agency. The review of this letter was arranged by Editor M. Östling.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering