High-performance sub-60 nm Si/SiGe (Ge: ∼ 75%)/Si heterostructure quantum well pMOSFETs with a conventional MOSFET process flow, including gate-first high- κ/metal gate stacks with ∼1 nm equivalent oxide thickness, are demonstrated. For the first time, short gate length Lg devices demonstrate not only controlled short channel effects, but also an excellent on-off current (Ion /Ioof ratio (∼5 × 104 at 55-nm Lg. The intrinsic gate delay of these heterostructures is ∼3 ps at Ion/Ioff ∼ 104 OFF-state leakage was minimized by controlling the defects in the epitaxial films. Finally, these short Lf devices, when benchmarked against state-of-the-art Si channel pMOSFETs, appear to be very promising in replacing the Si channel in CMOS scaling.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering