Denoised Residual Trace Analysis for Monitoring Semiconductor Process Faults

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7 Citations (Scopus)

Abstract

The detection of wafer faults in early process steps through monitoring and analyzing multivariate process trace data contribute to wafer yield improvements. Standard classification algorithms have been generally used for fault detection and classification (FDC). However, this approach can cause information loss while extracting statistical features from the trace data and cannot consider class imbalance situations where much fewer faulty wafers are generated than normal wafers. In addition, the approach does not consider normal wafer-to-wafer (W2W) variations and sensor noise inherent in the trace data. These drawbacks significantly degrade FDC performance. This paper proposes a method that builds an FDC model only with trace data of normal wafers in which W2W variations and sensor noise exist. The one-class FDC method detects the occurrence of abnormal trace patterns that cause wafer faults by removing W2W variations and sensor noise from raw traces by using denoising autoencoders, and this method finds the fault-introducing process parameters with the occurrence times. In experiments using the trace data of etch and chemical vapor deposition processes, the proposed method exhibited 1% and 6% higher performance than the best-performing method among comparison methods in terms of the geometric mean of the normal and fault detection accuracies.

Original languageEnglish
Article number8713521
Pages (from-to)293-301
Number of pages9
JournalIEEE Transactions on Semiconductor Manufacturing
Volume32
Issue number3
DOIs
Publication statusPublished - 2019 Aug

Bibliographical note

Funding Information:
Manuscript received April 12, 2019; accepted May 7, 2019. Date of publication May 13, 2019; date of current version August 2, 2019. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT, and Future Planning under Grant NRF-2016R1A2B4008337. (Corresponding author: Chang Ouk Kim.) The authors are with the Department of Industrial Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: kimco@yonsei.ac.kr). Digital Object Identifier 10.1109/TSM.2019.2916374

Publisher Copyright:
© 1988-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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