Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots

T. B. Norris, Kyoungsik Kim, J. Urayama, Z. K. Wu, J. Singh, P. K. Bhattacharya

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Abstract

We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5 ps time scale. Capture times from the barrier into the quantum dot are of the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for nongeminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the re-emission of carriers from the lower dot levels, due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130 fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier re-emission for the quantum dots on thermally activated scattering. The carrier dynamics at elevated temperature are thus strongly dominated by the high density of the high energy continuum states relative to the dot confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunnelling injection.

Original languageEnglish
Pages (from-to)2077-2087
Number of pages11
JournalJournal of Physics D: Applied Physics
Volume38
Issue number13
DOIs
Publication statusPublished - 2005 Jul 7

Fingerprint

Semiconductor quantum dots
quantum dots
temperature dependence
Scattering
Electrons
Excited states
Temperature
scattering
Quantum dot lasers
Resonant tunneling
Hot carriers
Ultrashort pulses
Transparency
Ground state
Wetting
Laser pulses
temperature
resonant tunneling
pulses
Spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Norris, T. B. ; Kim, Kyoungsik ; Urayama, J. ; Wu, Z. K. ; Singh, J. ; Bhattacharya, P. K. / Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots. In: Journal of Physics D: Applied Physics. 2005 ; Vol. 38, No. 13. pp. 2077-2087.
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Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots. / Norris, T. B.; Kim, Kyoungsik; Urayama, J.; Wu, Z. K.; Singh, J.; Bhattacharya, P. K.

In: Journal of Physics D: Applied Physics, Vol. 38, No. 13, 07.07.2005, p. 2077-2087.

Research output: Contribution to journalArticle

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AU - Norris, T. B.

AU - Kim, Kyoungsik

AU - Urayama, J.

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AU - Singh, J.

AU - Bhattacharya, P. K.

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