We report the enhanced p-type conduction properties in BiCuOSe by doping of monovalent ions (K+). As compared with undoped BiCuOSe, simultaneous increase in both the carrier concentration and the Hall mobility was achieved in the K-doped BiCuOSe. The origin of the enhancement was discussed in terms of the two-band structure in the valence band of the BiCuOSe, and the density of state effective masses of the heavy (∼1.1 me) and light hole (∼0.18 me) were estimated by using Pisarenko relation.
Bibliographical noteFunding Information:
This research was supported by Nano·Material Technology Development Program (No. 2011-0030147) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and also supported by the Dual Use Technology Program (No. 12-DU-MP-01) of the Agency for Defense Development, Republic of Korea.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)