Density of trap states measured by photon probe into ZnO based thin-film transistors

Kimoon Lee, Gunwoo Ko, Gun Hwan Lee, Gi Bok Han, Myung M. Sung, Tae Woo Ha, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We report on photo-excited trap-charge-collection spectroscopy, contrived to measure the density of deep-level traps near channel/dielectric interface in a working ZnO based thin-film transistor as a function of photon probe energy. Free charges trapped at a certain energy level are liberated by the correspondingly energetic photons and then electrically collected at the source/drain electrodes. During this photo-electric process, the threshold voltage of TFT shifts and its magnitude provides the density-of-state information of charge traps. In the present work, we directly characterized the density-of-state of ZnO based thin-film transistors with polymer-oxide double dielectrics after evaluating their gate stabilities.

Original languageEnglish
Article number082110
JournalApplied Physics Letters
Volume97
Issue number8
DOIs
Publication statusPublished - 2010 Aug 23

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transistors
traps
probes
photons
thin films
threshold voltage
energy levels
electrodes
oxides
shift
polymers
spectroscopy
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, Kimoon ; Ko, Gunwoo ; Lee, Gun Hwan ; Han, Gi Bok ; Sung, Myung M. ; Ha, Tae Woo ; Kim, Jae Hoon ; Im, Seongil. / Density of trap states measured by photon probe into ZnO based thin-film transistors. In: Applied Physics Letters. 2010 ; Vol. 97, No. 8.
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Density of trap states measured by photon probe into ZnO based thin-film transistors. / Lee, Kimoon; Ko, Gunwoo; Lee, Gun Hwan; Han, Gi Bok; Sung, Myung M.; Ha, Tae Woo; Kim, Jae Hoon; Im, Seongil.

In: Applied Physics Letters, Vol. 97, No. 8, 082110, 23.08.2010.

Research output: Contribution to journalArticle

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