The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization.
|Number of pages||4|
|Publication status||Published - 2007 Dec|
Bibliographical noteFunding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-041-D00402).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering