Dependence of electrical properties on interfacial layer of Ta2O5 films

Jae Woong Lee; Moon Ho Ham; Wan Joo Maeng; Hyungjun Kim; Jae Min Myoung

doi:10.1016/j.mee.2007.02.008

Dependence of electrical properties on interfacial layer of Ta₂O₅ films

Jae Woong Lee, Moon Ho Ham, Wan Joo Maeng, Hyungjun Kim, Jae Min Myoung

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta₂O₅ films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta₂O₅ film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta₂O₅ and SiO₂. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta₂O₅ films due to the thinnest interfacial layer and non-crystallization.

Original language	English
Pages (from-to)	2865-2868
Number of pages	4
Journal	Microelectronic Engineering
Volume	84
Issue number	12
DOIs	https://doi.org/10.1016/j.mee.2007.02.008
Publication status	Published - 2007 Dec

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-041-D00402).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2007.02.008

Cite this

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title = "Dependence of electrical properties on interfacial layer of Ta2O5 films",

abstract = "The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization.",

author = "Lee, {Jae Woong} and Ham, {Moon Ho} and Maeng, {Wan Joo} and Hyungjun Kim and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-041-D00402).",

year = "2007",

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doi = "10.1016/j.mee.2007.02.008",

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T1 - Dependence of electrical properties on interfacial layer of Ta2O5 films

AU - Lee, Jae Woong

AU - Ham, Moon Ho

AU - Maeng, Wan Joo

AU - Kim, Hyungjun

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-041-D00402).

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AB - The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization.

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