Dependence of electrical properties on interfacial layer of Ta2O5 films

Jae Woong Lee, Moon Ho Ham, Wan Joo Maeng, Hyungjun Kim, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization.

Original languageEnglish
Pages (from-to)2865-2868
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number12
DOIs
Publication statusPublished - 2007 Dec

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-041-D00402).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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