Dependence of electrical properties on interfacial layer of Ta2O5 films

Jae Woong Lee, Moon Ho Ham, Wan Joo Maeng, Hyungjun Kim, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization.

Original languageEnglish
Pages (from-to)2865-2868
Number of pages4
JournalMicroelectronic Engineering
Issue number12
Publication statusPublished - 2007 Dec

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-041-D00402).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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