The reverse bias leakage characteristics of InGaN/GaN light emitting diodes (LEDs) grown on Si (111) were investigated as a function of two factors: (1) bulk depletion width and (2) V-pit size. The reverse leakage current showed a decreasing trend with an increase in V-pit size, given a fixed depletion width. Atomic probe tomography was used to verify that a reduction in electric field near the vicinity of threading dislocations suppresses field-assisted carrier emission, reducing reverse leakage. Calculations using the appropriate theory show a reasonable agreement with the experimental results. These findings further elucidate the role of V-pits as passivation for reverse leakage paths and may be useful for not only LEDs but GaN-based power devices as well.
|Journal||Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics|
|Publication status||Published - 2015 Nov 1|
Bibliographical notePublisher Copyright:
© 2015 American Vacuum Society.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry