Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Hyun Kum, Mihyun Kim, Dong Gun Lee, Youngjo Tak, Jongsun Maeng, Joosung Kim, Gilho Gu, Joong Jung Kim, Yongil Kim, Jun Youn Kim, Youngsoo Park

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1 Citation (Scopus)

Abstract

The reverse bias leakage characteristics of InGaN/GaN light emitting diodes (LEDs) grown on Si (111) were investigated as a function of two factors: (1) bulk depletion width and (2) V-pit size. The reverse leakage current showed a decreasing trend with an increase in V-pit size, given a fixed depletion width. Atomic probe tomography was used to verify that a reduction in electric field near the vicinity of threading dislocations suppresses field-assisted carrier emission, reducing reverse leakage. Calculations using the appropriate theory show a reasonable agreement with the experimental results. These findings further elucidate the role of V-pits as passivation for reverse leakage paths and may be useful for not only LEDs but GaN-based power devices as well.

Original languageEnglish
Article number060602
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume33
Issue number6
DOIs
Publication statusPublished - 2015 Nov 1

Bibliographical note

Publisher Copyright:
© 2015 American Vacuum Society.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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