Deposition of dielectric thin films by atomic layer epitaxy and their application for electroluminescence displays

Dong Heon Lee, Yong Soo Cho, Kook Jeon Lee, Hyung Jin Jung

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO3 thin films were deposited on indium tin oxide (ITO)- coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.

Original languageEnglish
Pages (from-to)397-402
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume310
Publication statusPublished - 1993 Dec 1

Fingerprint

Atomic layer epitaxy
Dielectric films
Electroluminescence
atomic layer epitaxy
Electric breakdown
electroluminescence
Dielectric properties
dielectric properties
Display devices
Thin films
microstructure
Microstructure
Amorphous films
thin films
Tin oxides
electrical faults
indium oxides
Indium
tin oxides
flat surfaces

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO3 thin films were deposited on indium tin oxide (ITO)- coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.",
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Deposition of dielectric thin films by atomic layer epitaxy and their application for electroluminescence displays. / Lee, Dong Heon; Cho, Yong Soo; Lee, Kook Jeon; Jung, Hyung Jin.

In: Materials Research Society Symposium - Proceedings, Vol. 310, 01.12.1993, p. 397-402.

Research output: Contribution to journalConference article

TY - JOUR

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AU - Lee, Kook Jeon

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AB - Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO3 thin films were deposited on indium tin oxide (ITO)- coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.

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