Deposition temperature effect of the memory characteristics for Al 2O3/Y2O3/SiO2 (AYO) multi-stacked film

Hye Young Jung, Yoo Youl Choi, Hyung Keun Kim, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review


An investigation was conducted involving the memory characteristics of the Pt/Al2O3/Y2O3/SiO2/Si structure using a high-k Y2O3 charge trapping layer for SONOS (poly-silicon/oxide/nitride/oxide/silicon)-type nonvolatile memory applications. This work focused on Y2O3 layer deposition at different substrate temperatures, which ranged from 450-550° C by metal organic chemical vapor deposition (MOCVD) and examined the electrical properties and structural differences of each specimen. Results showed that the Y 2O3 deposited at 500°C had the highest memory characteristics and reliability than the other deposition condition. The maximum memory window of capacitor with an Y2O3 trapping layer deposited at 500°C was 3.11V which well endured up to 104 program/erase (P/E) cycles. The results indicated that deposition temperature is one of the most critical factors influencing the charge trapping properties.

Original languageEnglish
Pages (from-to)525-529
Number of pages5
JournalJournal of the Ceramic Society of Japan
Issue number1407
Publication statusPublished - 2012 Nov

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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