An investigation was conducted involving the memory characteristics of the Pt/Al2O3/Y2O3/SiO2/Si structure using a high-k Y2O3 charge trapping layer for SONOS (poly-silicon/oxide/nitride/oxide/silicon)-type nonvolatile memory applications. This work focused on Y2O3 layer deposition at different substrate temperatures, which ranged from 450-550° C by metal organic chemical vapor deposition (MOCVD) and examined the electrical properties and structural differences of each specimen. Results showed that the Y 2O3 deposited at 500°C had the highest memory characteristics and reliability than the other deposition condition. The maximum memory window of capacitor with an Y2O3 trapping layer deposited at 500°C was 3.11V which well endured up to 104 program/erase (P/E) cycles. The results indicated that deposition temperature is one of the most critical factors influencing the charge trapping properties.
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry