The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||2 A|
|Publication status||Published - 2001 Feb 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)