Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy

Jae Min Myoung, Kyu Hwan Shim, Sangsig Kim

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3 Citations (Scopus)

Abstract

The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.

Original languageEnglish
Pages (from-to)476-479
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number2 A
Publication statusPublished - 2001 Feb 1

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Cathodoluminescence
cathodoluminescence
Molecular beam epitaxy
Nitrides
nitrides
molecular beam epitaxy
Plasmas
Luminescence
luminescence
Linewidth
penetration
Spectroscopy
Impurities
impurities
room temperature
Substrates
configurations
spectroscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{a985abdeaf034577b0e2b9722c418d95,
title = "Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy",
abstract = "The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.",
author = "Myoung, {Jae Min} and Shim, {Kyu Hwan} and Sangsig Kim",
year = "2001",
month = "2",
day = "1",
language = "English",
volume = "40",
pages = "476--479",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2 A",

}

TY - JOUR

T1 - Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy

AU - Myoung, Jae Min

AU - Shim, Kyu Hwan

AU - Kim, Sangsig

PY - 2001/2/1

Y1 - 2001/2/1

N2 - The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.

AB - The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.

UR - http://www.scopus.com/inward/record.url?scp=0035246326&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035246326&partnerID=8YFLogxK

M3 - Article

VL - 40

SP - 476

EP - 479

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 A

ER -