Design and analysis of a new self-aligned asymmetric structure for deep sub-micrometer MOSFET

Chang Soon Choi, Kyung Whan Kim, Woo-Young Choi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new self-aligned asymmetric structure (SAAS) is proposed for deep sub-micrometer MOSFET and its device characteristics are analyzed. The proposed structure enables the source, drain and channel to be designed independently without additional lithography steps. SAAS with lateral asymmetric channel and highly doped source extension improves driving capability and short channel behavior without sacrificing hot carrier reliability. Based on the results of hydrodynamic device simulation over a wide range of process conditions, it is shown that highly doped asymmetric halo provides enhanced velocity overshoot and suppressed drain-induced barrier lowering. By employing asymmetric highly doped source extension, the degradation of driving capability is suppressed that can be caused by the increased parasitic resistance in highly doped asymmetric halo.

Original languageEnglish
Pages (from-to)1673-1678
Number of pages6
JournalSolid-State Electronics
Volume45
Issue number9
DOIs
Publication statusPublished - 2001 Sep 1

Fingerprint

Hot carriers
Lithography
micrometers
field effect transistors
Hydrodynamics
Degradation
halos
lithography
hydrodynamics
degradation
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "A new self-aligned asymmetric structure (SAAS) is proposed for deep sub-micrometer MOSFET and its device characteristics are analyzed. The proposed structure enables the source, drain and channel to be designed independently without additional lithography steps. SAAS with lateral asymmetric channel and highly doped source extension improves driving capability and short channel behavior without sacrificing hot carrier reliability. Based on the results of hydrodynamic device simulation over a wide range of process conditions, it is shown that highly doped asymmetric halo provides enhanced velocity overshoot and suppressed drain-induced barrier lowering. By employing asymmetric highly doped source extension, the degradation of driving capability is suppressed that can be caused by the increased parasitic resistance in highly doped asymmetric halo.",
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Design and analysis of a new self-aligned asymmetric structure for deep sub-micrometer MOSFET. / Choi, Chang Soon; Kim, Kyung Whan; Choi, Woo-Young.

In: Solid-State Electronics, Vol. 45, No. 9, 01.09.2001, p. 1673-1678.

Research output: Contribution to journalArticle

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