Design and fabrication of a Si PIN-type radiation detector for alpha spectroscopy

Han Soo Kim, Se Hwan Park, Jang Ho Ha, Seung Yeon Cho, Kun Sik Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Silicon PIN-type radiation detectors, which have 4.5 kΩ·cm and 7 kΩ·cm resistivities, were designed and fabricated for alpha spectroscopy. The main design considerations of the Si PIN-type radiation detector were a high biasing voltage, a low leakage current, and a low alpha energy loss caused by the incident window of the p+ layer. Two guard electrodes and an edge protection structure were incorporated to minimize the leakage current and to apply a high bias voltage for full depletion. A shallow p+ layer and non-metal deposition on the p+ layer were also incorporated to minimize alpha energy loss. The doping profile of the p+ layer and the alpha energy loss due to p+ layer were approximately calculated by using a Silvaco device simulation tool kit and the SRIM code, respectively. About 7-nA reverse leakage current at a 200-V reverse bias voltage and an energy resolution a 1.1% for 5.5 MeV alpha particles were achieved with the fabricated Si PIN-type radiation detectors, which had two different resistivities. Several important aspects to consider in the fabrication of a Si PIN-type radiation detector are also addressed.

Original languageEnglish
Pages (from-to)454-458
Number of pages5
JournalJournal of the Korean Physical Society
Volume55
Issue number2
DOIs
Publication statusPublished - 2009 Aug 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Design and fabrication of a Si PIN-type radiation detector for alpha spectroscopy'. Together they form a unique fingerprint.

  • Cite this